Single FETs, MOSFETs

Results: 15
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesLittelfuse Inc.Micro Commercial CoMicrochip TechnologyonsemiQorvoRohm SemiconductorSTMicroelectronicsWolfspeed, Inc.
Series
-C3M™CoolSiC™G3R™MDmesh™ K5Polar
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)3A4.7A (Tc)7A (Tc)7.6A (Tc)11A (Tc)12A (Tc)13A (Tc)17A (Tc)18A (Tc)20A (Tc)36A (Tc)58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V15V, 18V15V, 20V18V20V
Rds On (Max) @ Id, Vgs
42mOhm @ 29.5A, 18V78mOhm @ 13A, 18V189mOhm @ 6A, 18V208mOhm @ 5A, 18V224mOhm @ 12A, 20V286mOhm @ 4A, 18V290mOhm @ 10A, 20V420mOhm @ 4A, 15V455mOhm @ 3.6A, 15V468mOhm @ 2A, 18V515mOhm @ 5A, 12V690mOhm @ 6A, 10V940mOhm @ 2.5A, 20V1.32Ohm @ 1.5A, 20V
Vgs(th) (Max) @ Id
2.69V @ 2mA3.25V @ 100µA (Typ)3.5V @ 1mA3.6V @ 1mA4V @ 100µA4.3V @ 2.5mA4.5V @ 1mA5V @ 100µA5.6V @ 2.5mA5.7V @ 1.6mA5.7V @ 1mA5.7V @ 2.5mA5.7V @ 5.6mA5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 10 V5.9 nC @ 18 V8.5 nC @ 18 V11 nC @ 20 V12 nC @ 15 V13.4 nC @ 18 V15.5 nC @ 20 V19 nC @ 15 V27.5 nC @ 15 V31 nC @ 18 V34 nC @ 20 V42 nC @ 18 V44.2 nC @ 10 V45 nC @ 20 V
Vgs (Max)
+15V, -4V±15V+18V, -15V+20V, -2V±20V+22V, -4V+23V, -10V+23V, -7V+25V, -10V+25V, -15V+25V, -5V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V124 pF @ 1000 V184 pF @ 1360 V196 pF @ 800 V289 pF @ 800 V334 pF @ 800 V345 pF @ 1000 V398 pF @ 800 V491 pF @ 800 V650 pF @ 400 V665 pF @ 800 V740 pF @ 100 V1060 pF @ 800 V1370 pF @ 100 V
Power Dissipation (Max)
33W (Tc)50W (Tc)65W (Tc)68W (Tc)69W74W (Tc)75W (Tc)100W (Tc)103W (Tc)107W (Tc)119W (Tc)150W (Tc)175W (Tc)197W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
HiP247™PG-TO247-3-41PG-TO247-4-1PG-TO263-7-12TO-247-3TO-247ABTO-247NTO-252AA
Package / Case
TO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1
SICFET N-CH 1.2KV 4.7A TO263
Infineon Technologies
1,782
In Stock
1 : ¥50.90000
Cut Tape (CT)
1,000 : ¥26.30298
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
-
468mOhm @ 2A, 18V
5.7V @ 1mA
5.9 nC @ 18 V
+18V, -15V
196 pF @ 800 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
2,753
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
STW12N120K5
MOSFET N-CH 1200V 12A TO247
STMicroelectronics
1,197
In Stock
1 : ¥79.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
690mOhm @ 6A, 10V
5V @ 100µA
44.2 nC @ 10 V
±30V
1370 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
2,883
In Stock
1 : ¥82.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
18V
208mOhm @ 5A, 18V
5.6V @ 2.5mA
42 nC @ 18 V
+22V, -4V
398 pF @ 800 V
-
103W (Tc)
175°C (TJ)
Through Hole
TO-247N
TO-247-3
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
187
In Stock
1 : ¥103.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
TO-252-3
IXTY02N120P
MOSFET N-CH 1200V 200MA TO252
Littelfuse Inc.
17,881
In Stock
2,170
Factory
1 : ¥13.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
200mA (Tc)
10V
75Ohm @ 500mA, 10V
4V @ 100µA
4.7 nC @ 10 V
±20V
104 pF @ 25 V
-
33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-247-3
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
GeneSiC Semiconductor
8,467
In Stock
1 : ¥38.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
1,232
In Stock
1 : ¥54.60000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3L
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
Qorvo
75,991
In Stock
1 : ¥60.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1700 V
7.6A (Tc)
12V
515mOhm @ 5A, 12V
6V @ 10mA
27.5 nC @ 15 V
±25V
740 pF @ 100 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3
NTHL160N120SC1
SICFET N-CH 1200V 17A TO247-3
onsemi
315
In Stock
1 : ¥68.22000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
34 nC @ 20 V
+25V, -15V
665 pF @ 800 V
-
119W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
SCT20N120
SICFET N-CH 1200V 20A HIP247
STMicroelectronics
249
In Stock
1 : ¥100.98000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
20V
290mOhm @ 10A, 20V
3.5V @ 1mA
45 nC @ 20 V
+25V, -10V
650 pF @ 400 V
-
175W (Tc)
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
IMW65R030M1HXKSA1
IMW65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
243
In Stock
1 : ¥109.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
42mOhm @ 29.5A, 18V
5.7V @ 8.8mA
48 nC @ 18 V
+20V, -2V
1643 pF @ 400 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
MSJW20N65A-BP
SICW1000N170A-BP
N-CHANNEL MOSFET,TO-247AB
Micro Commercial Co
306
In Stock
1 : ¥43.02000
Bulk
-
Bulk
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
3A
15V, 20V
1.32Ohm @ 1.5A, 20V
4.5V @ 1mA
15.5 nC @ 20 V
+25V, -5V
124 pF @ 1000 V
-
69W
-55°C ~ 150°C (TJ)
Through Hole
TO-247AB
TO-247-3
CoolSiC_MOSFET
IMBG120R140M1HXTMA1
SICFET N-CH 1.2KV 18A TO263
Infineon Technologies
20
In Stock
1 : ¥59.77000
Cut Tape (CT)
1,000 : ¥33.88441
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
18A (Tc)
-
189mOhm @ 6A, 18V
5.7V @ 2.5mA
13.4 nC @ 18 V
+18V, -15V
491 pF @ 800 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
MSC750SMA170B
SICFET N-CH 1700V 7A TO247-3
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥44.66000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
Showing
of 15

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.