Single FETs, MOSFETs

Results: 12
Manufacturer
Infineon TechnologiesonsemiSTMicroelectronicsToshiba Semiconductor and StorageVishay Siliconix
Series
-DTMOSVIEFFRFET®, SUPERFET®FRFET®, SuperFET® IIHEXFET®MDmesh™OptiMOS™SuperFET® IIISuperFET® III, FRFET®TrenchFET®UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
200 V300 V500 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)18A (Tc)22.5A (Tc)35A (Tc)38A (Ta)38A (Tc)40A (Tc)41A (Tc)42A (Tc)44A (Tc)45A (Tc)88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V10V
Rds On (Max) @ Id, Vgs
10.7mOhm @ 88A, 10V50mOhm @ 10A, 10V55mOhm @ 22.5A, 10V63mOhm @ 21A, 10V65mOhm @ 19A, 10V68mOhm @ 16A, 10V70mOhm @ 22A, 10V82mOhm @ 20A, 10V110mOhm @ 17.5A, 10V120mOhm @ 19A, 10V150mOhm @ 11A, 10V850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA4V @ 1.69mA4V @ 250µA4V @ 270µA4.5V @ 4.4mA4.8V @ 5.2mA5V @ 250µA5V @ 3.5mA5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V62 nC @ 10 V63 nC @ 10 V67 nC @ 10 V73 nC @ 10 V77 nC @ 10 V78 nC @ 10 V81 nC @ 10 V85.2 nC @ 10 V87 nC @ 10 V100 nC @ 10 V145 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V1300 pF @ 25 V2628 pF @ 100 V3090 pF @ 400 V3340 pF @ 25 V3410 pF @ 400 V3650 pF @ 300 V4400 pF @ 100 V4603 pF @ 400 V4895 pF @ 100 V7100 pF @ 100 V
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)68W (Tc)150W (Tc)250W (Tc)270W (Tc)278W (Tc)300W (Tc)312W (Tc)313W (Tc)357W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO263-3PowerPAK® SO-8TO-220ABTO-263 (D2PAK)TOLL
Package / Case
8-PowerSFNPowerPAK® SO-8TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
Showing
of 12
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
52,324
In Stock
1 : ¥6.81000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
150mOhm @ 11A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1160 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263
FDB38N30U
MOSFET N CH 300V 38A D2PAK
onsemi
2,260
In Stock
4,000
Factory
1 : ¥25.94000
Cut Tape (CT)
800 : ¥15.68699
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
38A (Tc)
10V
120mOhm @ 19A, 10V
5V @ 250µA
73 nC @ 10 V
±30V
3340 pF @ 25 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
NVB082N65S3F
MOSFET N-CH 650V 40A D2PAK-3
onsemi
2,388
In Stock
1 : ¥70.19000
Cut Tape (CT)
800 : ¥44.22899
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
40A (Tc)
10V
82mOhm @ 20A, 10V
5V @ 4mA
81 nC @ 10 V
±30V
3410 pF @ 400 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2Pak
STB43N65M5
MOSFET N-CH 650V 42A D2PAK
STMicroelectronics
2,086
In Stock
1 : ¥74.63000
Cut Tape (CT)
1,000 : ¥42.33484
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
42A (Tc)
10V
63mOhm @ 21A, 10V
5V @ 250µA
100 nC @ 10 V
±25V
4400 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
FCB070N65S3
MOSFET N-CH 650V 44A D2PAK
onsemi
1,610
In Stock
1 : ¥50.00000
Cut Tape (CT)
800 : ¥31.51251
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
44A (Tc)
10V
70mOhm @ 22A, 10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
-
312W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB107N20NAATMA1
MOSFET N-CH 200V 88A D2PAK
Infineon Technologies
8,793
In Stock
1 : ¥50.33000
Cut Tape (CT)
1,000 : ¥37.22120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 270µA
87 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IRF840STRLPBF
MOSFET N-CH 500V 8A D2PAK
Vishay Siliconix
1,379
In Stock
1 : ¥22.49000
Cut Tape (CT)
800 : ¥12.58706
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1300 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB068N60EF-GE3
MOSFET N-CH 600V 41A D2PAK
Vishay Siliconix
4,298
In Stock
1 : ¥43.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
41A (Tc)
10V
68mOhm @ 16A, 10V
5V @ 250µA
77 nC @ 10 V
±30V
2628 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
FCB110N65F
MOSFET N-CH 650V 35A D2PAK
onsemi
1,300
In Stock
1 : ¥49.67000
Cut Tape (CT)
800 : ¥31.29741
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
NVB055N60S5F
SUPERFET5 FRFET, 55MOHM, D2PAK
onsemi
800
In Stock
1 : ¥56.40000
Cut Tape (CT)
800 : ¥35.53624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
45A (Tc)
10V
55mOhm @ 22.5A, 10V
4.8V @ 5.2mA
85.2 nC @ 10 V
±30V
4603 pF @ 400 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
0
In Stock
Check Lead Time
1 : ¥48.44000
Cut Tape (CT)
2,000 : ¥25.96351
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
38A (Ta)
10V
65mOhm @ 19A, 10V
4V @ 1.69mA
62 nC @ 10 V
±30V
3650 pF @ 300 V
-
270W (Tc)
150°C
-
-
Surface Mount
TOLL
8-PowerSFN
PowerPAK SO-8
SQJA20EP-T1_GE3
MOSFET N-CH 200V 22.5A PPAK SO-8
Vishay Siliconix
3
In Stock
1 : ¥11.58000
Cut Tape (CT)
3,000 : ¥4.79335
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
22.5A (Tc)
7.5V, 10V
50mOhm @ 10A, 10V
3.5V @ 250µA
27 nC @ 10 V
±20V
1300 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.