Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
CoolMOS™ CFD7SuperFET® III
Product Status
ActiveNot For New Designs
Current - Continuous Drain (Id) @ 25°C
25A (Tc)44A (Tc)
Rds On (Max) @ Id, Vgs
67mOhm @ 22A, 10V90mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4.4mA4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V78 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
2513 pF @ 400 V3090 pF @ 400 V
Power Dissipation (Max)
127W (Tc)312W (Tc)
Supplier Device Package
PG-TO220-3TO-220
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FCP067N65S3
MOSFET N-CH 650V 44A TO220
onsemi
760
In Stock
1 : ¥50.90000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
44A (Tc)
10V
67mOhm @ 22A, 10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
-
312W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
190
In Stock
1 : ¥40.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
25A (Tc)
10V
90mOhm @ 12.5A, 10V
4.5V @ 630µA
53 nC @ 10 V
±20V
2513 pF @ 400 V
-
127W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.