Higher efficiency leads to lower operating temperature and less power loss per device. Increasing the power density is possible through the use of smaller components or driving more current per device. When using the SiSA04DN as a low-side switch in synchronous buck, the efficiency improves across all loads compared to using the SiR818DP, a TrenchFET 3 device in a  PPAK SO8 package. Although the SiSA04DN has a 66% smaller footprint, the operating temperature is very similar to the operating temperature curve of the SiR818DP. TrenchFET Gen IV is an excellent solution to achieve higher power density in cloud computing infrastructure, mobile computing, and consumer electronics.