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TrenchFET Gen IV MOSFETs PowerPAIR Slide 3

The evolution of MOSFET technologies has become more sophisticated than reducing on-resistance. The benefit of increasing transistor cell density has a diminishing return with a larger penalty from higher gate charges. While developing TrenchFET Gen IV, the new design not only focused on reducing Rds(on), but also Qg, Qgd, and the ratio between Qgd and Qgs have been fine tuned. The mission was to build a process that is versatile and efficient, for various needs in switch-mode power supplies. With 32% lower Rds-Qg FOM reduction, both conduction and switching losses can be improved. This benefits both high-side and low-side switches in synchronous buck regulators. Reducing Qgd improves switching behavior, enabling fast turn on/off to meet the requirement of higher switching frequency; and enhances immunity to CdV/dt induced shoot-through during switching. Lower Qgd allows a reduction of Qswitch, which directly contributes to switching loss of the high-side MOSFET.

PTM Published on: 2014-01-30