Beyond the standard MOSFET, TrenchFET Gen IV also enables an application specific version, the SKYFET. Vishay’s SKYFET devices feature a monolithic Schottky diode which exhibits soft reverse recovery. The result is higher efficiency across the load compared to devices without Schottky. The graph on left side of this slide illustrates the efficiency improvement of SKYFET by comparing two devices with identical high-side MOSFET in the same PowerPAIR packaging. Even though SiZ914DT has higher Rds(on), the improvement of using SKYFET was a worthwhile trade-off.