TG-NSP35 is a thermal interface material which comprises a composition of non-silicone organics exhibiting thermal conductivity of approximately 3.5 W/mK and has a compressed bond-line thickness of approximately 18 µm or less using a compressive force of approximately 100 psi or less. TG-NSP35 is an improved interface material for semiconductor devices and, more particularly, a low compressive force, non-silicone, high thermal conducting formulation interface material. TG-NSP35 provides a structure to improve thermal performance, reliability and ease of field rework/repair of devices and/or components with large uneven thermal interfaces. Advantageously, the use of a non-silicone based thermal interface materials avoids the risk of impacting functionality or component rework and/or by cross-contamination due to silicone migration and contamination of interconnects (e.g., land grid array (LGA) pads and other active devices). Moreover, TG-NSP35 has low volatility and does not dry-out when stored by field engineers.