As automotive systems today get more complex and require higher power solutions, designers are looking at the benefits in paralleling MOSFETs, particularly in thermal terms. With two MOSFETs in parallel, users will have only half the current flowing through each of them, compared to using just one MOSFET. In the ON-State, the MOSFETs tend to self-regulate and the current is shared equally; but during the switching phase it is important that the two MOSFETs turn on and off at the same time or else there will be an imbalance in the current flowing through the two devices. The parameter that is critical for this is the MOSFET gate threshold voltage (V_GS(th)). The closer the 2 devices are matched in the V_GS(th) the closer they will be synchronised during switching. Trench 9 was designed to have a much tighter threshold distribution to facilitate easier switching in parallel. In previous generations, the gate threshold voltage was 1.6V, whereas the T9 is 1.2V, ensuring that T9 performance is good, if there is a need to parallel.