The drive to reduce R_DS(on) is achieved in various ways: As the silicon performance improves, the package is becoming more important in the overall resistance of the MOSFET. One way to improve the package resistance is to move from the older style wire bonded packages, such as TO-220, I²PAK and D²PAK, to clip bonded packaging such as LFPAK. For example, in T9 technology the lowest R_DS(on) released will be1.2 mΩ in D²PAK, whereas the significantly smaller clip bonded LFPAK56E will be 1.0 mΩ. In terms of silicon, every generation is aimed at reducing the switch resistance and the drift resistance by reducing the cell pitch, deeper trenches and various other proprietary design features, while the substrate resistance is reduced by using thinner and thinner wafers.