The new-generation EPC2010 also has improved RDS(ON) at lower gate-source voltages. The RoHS devices are fully enhanced at 20A with 4V on the gate. The older generation devices, EPC1010, required 5V applied to the gate to be fully enhanced at 20A. Similar to the previously discussed devices, this improvement allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6V.