The new-generation EPC2015 also has improved RDS(ON) at lower gate-source voltages. The RoHS devices are fully enhanced at 50A with 4V on the gate. The older generation devices, EPC1015, required 5V applied to the gate to be fully enhanced at 50A. Just as with the EPC2001 discussed earlier, this improvement allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6V.