In summary, the new-generation of EPC’s eGaN FETs are lead free and halogen free and have improved electrical performance, matched with additional support documentation to help the system designer deliver leading edge eGaN FET based product faster and with less engineering effort. These products maintain “backward compatibility” with the prior generation of eGaN FETs from EPC. The device performance allows the power electronics designer the opportunity to improve the state-of-the-art in a leap that has not been seen since the advent of the silicon power MOSFET more than 30 years ago. Even though EPC is very early in the development stages, eGan FETs are already outperforming the best available silicon devices. The history of semiconductors tells users that they can expect huge improvements in the performance of GaN FETs in the coming months and years.