To demonstrate the increased speed, this is a switching waveform from the EPC2100 driven by an LM5113 driver IC from Texas Instruments. Pictured is the switch node of the half bridge. Sub nanosecond rise and fall times are achieved despite the 1.2 nanosecond rise and fall time of the driver IC. The reduced inductance, coupled with an optimum layout enables very low voltage overshoot. 3.6V at 25A with 12V input. This low overshoot means that the 30V half bridges can comfortably handle input voltages that are significantly higher than comparably rated MOSFETs due to the inherently higher overshoot of a circuit using the larger, and more inductive silicon devices. This extra speed translates into efficiency.