There are two configurations available for monolithic eGaN Half Bridges devices. Asymmetrical devices feature a four-to-one size ratio between the low side FET and the high side FET. This ratio is optimized for high step-down ratio point of load controllers. The overall dimensions of the half bridge are 6 mm by 2.3mm. The chip is only 0.7mm tall with an additional 100 micron solder bumps. The layout features interleaved switch node, input voltage, and power ground leads to enhance inductive cancellation. The high-side FET, Q1, has a gate and a gate return lead to reduce the effects of common source inductance that could slow down the upper device.