917-EPC2100ENG-ND

eGaN Integrated GaN Power

EPC

This presentation will discuss a family of eGaN products from Efficient Power Conversion – integrated half bridge products. Additionally, it will discuss the benefits of integration, review the current products available, and provide some actual results from tested application circuits. These monolithic GaN devices include the upper and lower FETs connected in a half bridge configuration and are faster, smaller, and more efficient than existing MOSFET or discrete GaN FET technology.

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PTM Published on: 2015-06-19