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GaN-Power-Slide3

For applications requiring a more symmetric device ratio, such as brick power supplies, motor drives, and class D audio, there are also devices with two equal sized dies. Again, the layout features interleaved switch node, input voltage, and power ground leads to enhance inductive cancellation. The high-side FET, Q1, has a gate and a gate return lead to reduce the effects of common source inductance that could slow down the upper device.

PTM Published on: 2015-06-19