In summary, replacing Si PiN rectifiers with SiC Schottky diodes will result in instant increases in inverter efficiencies. Lower losses in the SiC Schottky diodes reduce IGBT junction temperatures, thereby increasing system reliability and reducing cooling requirements. The general rule of thumb for thermal/reliability relationship is that for every 10°C reduction in device temperature, there’s a doubling of part MTTF (mean time to failure). SiC diodes also enable more power output from smaller physical packages, and permit the designer to increase the system switching frequency while reducing physical size.