By replacing the Si PiN diodes in this 2kW system with SiC Schottkys and reducing gate resistance, the IGBT switching losses are reduced 51% and the diode switching losses 99%. This equates to a 1.05% increase in inverter section efficiency. The combination of a 1 to 2% improvement in the boost section and up to 1% in the inverter section can lead to an increase of up to 1% in overall system efficiency (e.g. 95% to 96%). This represents a 20% reduction in overall system losses. It must be pointed out that a 0.1% increase in overall efficiency is deemed impressive in the Si realm, while a 1% potential increase that SiC offers is compelling.