Another benefit of switching to SiC Schottkys is the ability to turn the IGBT on faster now that the recovery currents have been eliminated. This can be accomplished by using the above configuration. This replaces the typical single gate resistance configuration with a separate turn-on and turn-off resistor. RG(on) can be reduced to turn the IGBT on faster and must be at least the IGBT manufacturer's suggested value for short circuit protection. If the device is turned off too fast, the voltage overshoot could become large enough under short circuit (high di/dt) conditions to cause device failure. In order to maximize system performance using SiC diodes, some engineering optimization needs to be done. This will be critical for some customers to see the total value in Wolfspeed SiC diodes.