Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesLittelfuse Inc.
Series
HEXFET®HEXFET®, StrongIRFET™TrenchT2™
Product Status
ActiveLast Time Buy
Current - Continuous Drain (Id) @ 25°C
195A (Tc)500A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 100A, 10V1.6mOhm @ 100A, 10V1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.5V @ 250µA3.9V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 4.5 V330 nC @ 10 V405 nC @ 10 V460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8920 pF @ 25 V10315 pF @ 25 V14240 pF @ 25 V25000 pF @ 25 V
Power Dissipation (Max)
341W (Tc)366W (Tc)380W (Tc)1000W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247ACTO-268AA
Package / Case
TO-247-3TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IRFP7430PBF
MOSFET N-CH 40V 195A TO247AC
Infineon Technologies
482
In Stock
1 : ¥25.37000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.3mOhm @ 100A, 10V
3.9V @ 250µA
460 nC @ 10 V
±20V
14240 pF @ 25 V
-
366W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRLP3034PBF
MOSFET N-CH 40V 195A TO247AC
Infineon Technologies
486
In Stock
1 : ¥44.09000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
4.5V, 10V
1.7mOhm @ 195A, 10V
2.5V @ 250µA
162 nC @ 4.5 V
±20V
10315 pF @ 25 V
-
341W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP4004PBF
MOSFET N-CH 40V 195A TO247AC
Infineon Technologies
1,398
In Stock
1 : ¥44.66000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
10V
1.7mOhm @ 195A, 10V
4V @ 250µA
330 nC @ 10 V
±20V
8920 pF @ 25 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-268
IXTT500N04T2
MOSFET N-CH 40V 500A TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
300 : ¥89.94007
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
3.5V @ 250µA
405 nC @ 10 V
±20V
25000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.