Single FETs, MOSFETs

Showing

of 10

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SCT4013DW7TL 750V, 98A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	363 In Stock	1 : ¥298.26000 Cut Tape (CT) 1,000 : ¥194.69469 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	98A (Tj)	18V	16.9mOhm @ 58A, 18V	4.8V @ 30.8mA	170 nC @ 18 V	+21V, -4V	4580 pF @ 500 V	-	267W	175°C (TJ)	-	-	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UJ4SC075009B7S 750V/9MOHM, N-OFF SIC STACK CASC Qorvo	1,028 In Stock	1 : ¥313.70000 Cut Tape (CT) 800 : ¥201.14021 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	106A (Tc)	12V	11.5mOhm @ 70A, 12V	5.5V @ 10mA	75 nC @ 15 V	±20V	3340 pF @ 400 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AIMBG120R010M1XTMA1 SIC_DISCRETE Infineon Technologies	678 In Stock	1 : ¥411.72000 Cut Tape (CT) 1,000 : ¥285.20713 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	187A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZA120R007M1HXKSA1 SIC DISCRETE Infineon Technologies	114 In Stock	1 : ¥496.36000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	225A (Tc)	15V, 18V	9.9mOhm @ 108A, 18V	5.2V @ 47mA	289 nC @ 18 V	+20V, -5V	9170 pF @ 800 V	-	750W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
UJ4SC075006K4S 750V/6MOHM, SIC, STACKED CASCODE Qorvo	688 In Stock	1 : ¥648.82000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	120A (Tc)	12V	7.4mOhm @ 80A, 12V	6V @ 10mA	164 nC @ 15 V	±20V	8374 pF @ 400 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
IMBG65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	157 In Stock	1 : ¥132.92000 Cut Tape (CT) 1,000 : ¥84.19836 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	91A (Tc)	15V, 20V	24mOhm @ 46.9A, 18V	5.6V @ 9.5mA	57 nC @ 18 V	+23V, -7V	2038 pF @ 400 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW65R020M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	227 In Stock	1 : ¥140.14000 Tube	CoolSiC™ Gen 2	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	83A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	5.6V @ 9.5mA	57 nC @ 18 V	+23V, -7V	2038 pF @ 400 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40	TO-247-3
UJ4SC075008L8S SICFET N-CH 750V 106A TOLL Qorvo	22 In Stock	1 : ¥414.10000 Cut Tape (CT) 2,000 : ¥195.80384 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	106A (Tc)	12V	11.4mOhm @ 70A, 12V	5.5V @ 10mA	75 nC @ 15 V	±20V	3340 pF @ 400 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
IMBG120R008M2HXTMA1 SIC DISCRETE Infineon Technologies	0 In Stock Check Lead Time	1 : ¥395.06000 Cut Tape (CT) 1,000 : ¥277.63137 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	189A (Tc)	15V, 18V	7.7mOhm @ 89.9A, 18V	5.1V @ 28.3mA	195 nC @ 18 V	+23V, -10V	6380 pF @ 800 V	-	800W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R015M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	0 In Stock Check Lead Time	1 : ¥163.29000 Cut Tape (CT) 1,000 : ¥109.99808 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	115A (Tc)	15V, 20V	18mOhm @ 64.2A, 18V	5.6V @ 13mA	79 nC @ 18 V	+23V, -7V	2792 pF @ 400 V	-	416W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Showing

of 10

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.