Single FETs, MOSFETs

Results: 2
Series
CoolMOS™ CFD7CoolMOS™ P6
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)23.8A (Tc)
Rds On (Max) @ Id, Vgs
160mOhm @ 9A, 10V280mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 180µA4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
807 pF @ 400 V2080 pF @ 100 V
Power Dissipation (Max)
52W (Tc)176W (Tc)
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IPP60R160P6XKSA1
MOSFET N-CH 600V 23.8A TO220-3
Infineon Technologies
358
In Stock
1 : ¥20.44000
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N-Channel
MOSFET (Metal Oxide)
600 V
23.8A (Tc)
10V
160mOhm @ 9A, 10V
4.5V @ 750µA
44 nC @ 10 V
±20V
2080 pF @ 100 V
-
176W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP60R280CFD7XKSA1
MOSFET N-CH 650V 9A TO220-3
Infineon Technologies
21
In Stock
1 : ¥19.05000
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N-Channel
MOSFET (Metal Oxide)
650 V
9A (Tc)
10V
280mOhm @ 3.6A, 10V
4.5V @ 180µA
18 nC @ 10 V
±20V
807 pF @ 400 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.