Single FETs, MOSFETs

Results: 8
Series
CoolMOS™ P7OptiMOS™StrongIRFET™ 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New Designs
Drain to Source Voltage (Vdss)
60 V80 V100 V200 V700 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)17A (Ta), 45A (Tc)27A (Ta), 184A (Tc)32A (Ta), 191A (Tc)35A (Ta), 196A (Tc)84A (Tc)90A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 100A, 10V1.9mOhm @ 100A, 10V2.6mOhm @ 100A, 10V3.75mOhm @ 100A, 10V4mOhm @ 90A, 10V6mOhm @ 45A, 10V12mOhm @ 84A, 10V600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
2.8V @ 36µA3.5V @ 155µA3.5V @ 90µA3.8V @ 169µA3.8V @ 194µA3.8V @ 267µA4V @ 270µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V27 nC @ 10 V87 nC @ 10 V98 nC @ 10 V117 nC @ 10 V154 nC @ 10 V186 nC @ 10 V255 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
364 pF @ 400 V2000 pF @ 30 V6650 pF @ 100 V7300 pF @ 50 V8110 pF @ 40 V8700 pF @ 40 V11000 pF @ 30 V12000 pF @ 40 V
Power Dissipation (Max)
3W (Ta), 83W (Tc)3.8W (Ta), 250W (Tc)3.8W (Ta), 300W (Tc)6.9W (Tc)188W (Tc)214W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT223PG-TO220-3
Package / Case
TO-220-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-SOT223
IPN70R600P7SATMA1
MOSFET N-CH 700V 8.5A SOT223
Infineon Technologies
2,365
In Stock
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.50971
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tc)
10V
600mOhm @ 1.8A, 10V
3.5V @ 90µA
10.5 nC @ 10 V
±16V
364 pF @ 400 V
-
6.9W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
TO-220-3
IPP120N20NFDAKSA1
MOSFET N-CH 200V 84A TO220-3
Infineon Technologies
732
In Stock
1 : ¥49.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
84A (Tc)
10V
12mOhm @ 84A, 10V
4V @ 270µA
87 nC @ 10 V
±20V
6650 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP040N06N3GXKSA1
MOSFET N-CH 60V 90A TO220-3
Infineon Technologies
105
In Stock
1 : ¥17.40000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
10V
4mOhm @ 90A, 10V
4V @ 90µA
98 nC @ 10 V
±20V
11000 pF @ 30 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
1,389
In Stock
1 : ¥21.10000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
27A (Ta), 184A (Tc)
6V, 10V
2.6mOhm @ 100A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
-
3.8W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP037N08N3GXKSA1
MOSFET N-CH 80V 100A TO220-3
Infineon Technologies
2,165
In Stock
1 : ¥22.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3.75mOhm @ 100A, 10V
3.5V @ 155µA
117 nC @ 10 V
±20V
8110 pF @ 40 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
912
In Stock
1 : ¥23.07000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
32A (Ta), 191A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 194µA
186 nC @ 10 V
±20V
8700 pF @ 40 V
-
3.8W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
547
In Stock
1 : ¥29.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
35A (Ta), 196A (Tc)
6V, 10V
1.6mOhm @ 100A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP060N06NAKSA1
MOSFET N-CH 60V 17A/45A TO220-3
Infineon Technologies
494
In Stock
1 : ¥12.81000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 45A (Tc)
6V, 10V
6mOhm @ 45A, 10V
2.8V @ 36µA
27 nC @ 10 V
±20V
2000 pF @ 30 V
-
3W (Ta), 83W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.