TO-261-3 Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPN60R2K0PFD7SATMA1 MOSFET N-CH 600V 3A SOT223 Infineon Technologies	15,320 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.88820 Tape & Reel (TR)	CoolMOS™PFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3A (Tc)	10V	2Ohm @ 500mA, 10V	4.5V @ 30µA	3.8 nC @ 10 V	±20V	134 pF @ 400 V	-	6W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-3-1	TO-261-3
STN6N60M2 MOSFET N-CH 600V 5.5A SOT223-2 STMicroelectronics	6,426 In Stock	1 : ¥5.34000 Cut Tape (CT) 4,000 : ¥2.02526 Tape & Reel (TR)	MDmesh™ M2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5.5A (Tc)	10V	1.25Ohm @ 2A, 10V	4V @ 250µA	6.2 nC @ 10 V	±25V	220 pF @ 100 V	-	6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-2	TO-261-3
IPN60R360PFD7SATMA1 MOSFET N-CH 600V 10A SOT223 Infineon Technologies	13,117 In Stock	1 : ¥6.08000 Cut Tape (CT) 3,000 : ¥3.26134 Tape & Reel (TR)	CoolMOS™PFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	360mOhm @ 2.9A, 10V	4.5V @ 140µA	12.7 nC @ 10 V	±20V	534 pF @ 400 V	-	7W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-3-1	TO-261-3
R6002JND4TL1 600V 1A SOT-223-3, PRESTOMOS WIT Rohm Semiconductor	3,982 In Stock	1 : ¥6.73000 Cut Tape (CT) 4,000 : ¥2.59703 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1A (Tc)	15V	3.25Ohm @ 1A, 15V	7V @ 100µA	7 nC @ 15 V	±30V	130 pF @ 100 V	-	6.6W (Tc)	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
R6003KND4TL1 600V 1.3A SOT-223-3, HIGH-SPEED Rohm Semiconductor	3,988 In Stock	1 : ¥7.31000 Cut Tape (CT) 4,000 : ¥2.81344 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.3A (Tc)	10V	1.5Ohm @ 1A, 10V	5.5V @ 1mA	8 nC @ 10 V	±20V	185 pF @ 25 V	-	7.8W (Tc)	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
R6003JND4TL1 600V 1.3A SOT-223-3, PRESTOMOS W Rohm Semiconductor	3,980 In Stock	1 : ¥7.72000 Cut Tape (CT) 4,000 : ¥2.96975 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.3A (Tc)	15V	2.15Ohm @ 1.5A, 15V	7V @ 300µA	8 nC @ 15 V	±30V	180 pF @ 100 V	-	7.8W (Tc)	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
R6004END4TL1 600V 2.4A SOT-223-3, LOW-NOISE P Rohm Semiconductor	3,963 In Stock	1 : ¥7.88000 Cut Tape (CT) 4,000 : ¥3.34330 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.4A (Tc)	10V	980mOhm @ 1.5A, 10V	4V @ 1mA	15 nC @ 10 V	±20V	250 pF @ 25 V	-	9.1W (Tc)	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
R6006KND4TL1 600V 2.8A SOT-223-3, HIGH-SPEED Rohm Semiconductor	3,995 In Stock	1 : ¥8.37000 Cut Tape (CT) 4,000 : ¥3.55226 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.8A (Tc)	10V	870mOhm @ 2A, 10V	5.5V @ 1mA	12 nC @ 10 V	±20V	350 pF @ 25 V	-	12.3W (Tc)	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
FQT1N80TF-WS MOSFET N-CH 800V 200MA SOT223-3 onsemi	0 In Stock Check Lead Time	1 : ¥7.96000 Cut Tape (CT) 4,000 : ¥3.28349 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	200mA (Tc)	10V	20Ohm @ 100mA, 10V	5V @ 250µA	7.2 nC @ 10 V	±30V	195 pF @ 25 V	-	2.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
CPC3981ZTR MOSFET N-CH DEP 800V 45OH SOT223 Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥12.89000 Cut Tape (CT) 3,000 : ¥5.82291 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	100mA	0V	45Ohm @ 100mA, 0V	3.1V @ 1µA	-	±15V	105 pF @ 25 V	Depletion Mode	2.25W (Ta)	150°C (TJ)	Surface Mount	SOT-223-2L	TO-261-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.