68A (Tc) Single FETs, MOSFETs

Results: 37
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedDiotec SemiconductorInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyNexperia USA Inc.NXP USA Inc.onsemiPanjit International Inc.STMicroelectronicsToshiba Semiconductor and StorageWolfspeed, Inc.
Series
-C3M™HEXFET®, StrongIRFET™HiPerFET™, PolarP2™MDmesh™ DM6MDmesh™ IIMDmesh™ II PlusMDmesh™ M2OptiMOS™TrenchMOS™TrenchP™U-MOSIX-H
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V60 V75 V100 V120 V150 V200 V500 V600 V650 V1200 V1700 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V10V15V18V20V
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V4.1mOhm @ 20A, 10V6mOhm @ 20A, 10V7mOhm @ 15A, 10V7.2mOhm @ 15A, 4.5V7.3mOhm @ 20A, 10V7.9mOhm @ 10A, 10V8mOhm @ 41A, 10V12mOhm @ 34A, 10V13.9mOhm @ 15A, 10V15mOhm @ 20A, 10V18.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
710mV @ 1A2V @ 1mA2.4V @ 72µA2.5V @ 250µA2.5V @ 500µA2.8V @ 17.5mA3V @ 250µA3.25V @ 2.5mA (Typ)3.6V @ 11.5mA3.6V @ 1mA3.7V @ 100µA4V @ 15mA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V17.2 nC @ 10 V26 nC @ 10 V34 nC @ 10 V37 nC @ 10 V48.2 nC @ 10 V51 nC @ 10 V54.5 nC @ 10 V59 nC @ 10 V79 nC @ 10 V104 nC @ 15 V110 nC @ 10 V
Vgs (Max)
-8V, +19V+15V, -4V+15V, -5V±15V+18V, -8V+20V, -5V±20V+22V, -10V+23V, -10V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 15 V1362 pF @ 10 V1630 pF @ 25 V2057 pF @ 30 V2344 pF @ 75 V2790 pF @ 1000 V2908 pF @ 800 V3130 pF @ 800 V3175 pF @ 800 V3195 pF @ 50 V3280 pF @ 30 V3300 pF @ 1000 V
Power Dissipation (Max)
1.7W (Ta)25W (Tc)35.5W (Tc)36W (Tc)50W (Tc)62.5W (Tc)64W (Tc)65W (Tc)83W (Tc)114W (Tc)170W (Tc)195W (Tc)
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
8-DFN (5x6)8-QFN (5x6)D2PAKDFN5060-8LFPAK56, Power-SO8PG-TDSON-8PQFN (5x6)SOT-227BTO-220ABTO-220SISTO-247TO-247 (IXTH)TO-247 Long LeadsTO-247-3
Package / Case
8-PowerTDFN8-PowerVDFN-SC-100, SOT-669SOT-227-4, miniBLOCTO-220-3TO-220-3 Full PackTO-247-3TO-247-4TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
C3M0065090J
C3M0032120J1
1200V 32MOHM SIC MOSFET
Wolfspeed, Inc.
1,330
In Stock
1 : ¥297.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3 HiP
STW70N60M2
MOSFET N-CH 600V 68A TO247
STMicroelectronics
812
In Stock
1 : ¥75.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
68A (Tc)
10V
40mOhm @ 34A, 10V
4V @ 250µA
118 nC @ 10 V
±25V
5200 pF @ 100 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
TO-247-3
NTHL022N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
232
In Stock
1 : ¥150.24000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
139 nC @ 18 V
+22V, -10V
3130 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
LFPAK56/POWER-SO8/SOT669
BUK7Y7R0-40HX
MOSFET N-CH 40V 68A LFPAK56
Nexperia USA Inc.
3,745
In Stock
1 : ¥8.13000
Cut Tape (CT)
1,500 : ¥3.58172
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
68A (Tc)
10V
7mOhm @ 15A, 10V
3.6V @ 1mA
26 nC @ 10 V
±20V
1630 pF @ 25 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
D2PAK SOT404
PSMN013-100BS,118
MOSFET N-CH 100V 68A D2PAK
Nexperia USA Inc.
15,177
In Stock
1 : ¥13.79000
Cut Tape (CT)
800 : ¥7.71158
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
68A (Tc)
10V
13.9mOhm @ 15A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
3195 pF @ 50 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-4
NVH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
837
In Stock
213,300
Factory
1 : ¥227.66000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
PG-TDSON-8
BSC0303LSATMA1
TRENCH >=100V PG-TDSON-8
Infineon Technologies
4,908
In Stock
1 : ¥13.79000
Cut Tape (CT)
5,000 : ¥5.97336
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
68A (Tc)
4.5V, 10V
12mOhm @ 34A, 10V
2.4V @ 72µA
51 nC @ 10 V
±20V
4900 pF @ 60 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
240
In Stock
1 : ¥136.04000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
234
In Stock
1 : ¥136.04000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247
IXTH68P20T
MOSFET P-CH 200V 68A TO247
Littelfuse Inc.
200
In Stock
1 : ¥148.60000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
68A (Tc)
10V
55mOhm @ 34A, 10V
4V @ 250µA
380 nC @ 10 V
±15V
33400 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
220
In Stock
1 : ¥163.13000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+15V, -5V
2908 pF @ 800 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247
TO-247-3
180
In Stock
1 : ¥163.13000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
68A (Tc)
15V
43mOhm @ 20A, 15V
2.8V @ 17.5mA
104 nC @ 15 V
+18V, -8V
2908 pF @ 800 V
-
300W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0065090J-TR
C3M0032120J1-TR
SIC, MOSFET, 32M, 1200V, TO-263-
Wolfspeed, Inc.
800
In Stock
1 : ¥297.19000
Cut Tape (CT)
800 : ¥197.09524
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
5,955
In Stock
1 : ¥12.89000
Cut Tape (CT)
3,000 : ¥5.31968
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
68A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
3V @ 250µA
37 nC @ 10 V
±20V
2057 pF @ 30 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN5060-8
8-PowerVDFN
C3M0021120J2-TR
C3M0032120J2-TR
MOSFET N-CH 1200V 68A TO263
Wolfspeed, Inc.
768
In Stock
1 : ¥169.04000
Cut Tape (CT)
800 : ¥116.74589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
-
3.6V @ 11.5mA
111 nC @ 15 V
-8V, +19V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
MSC035SMA170B4
MOSFET SIC 1700V 35 MOHM TO-247-
Microchip Technology
21
In Stock
1 : ¥343.17000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
52
In Stock
1 : ¥106.48000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-3
MSC035SMA170B
MOSFET SIC 1700 V 45 MOHM TO-247
Microchip Technology
9
In Stock
1 : ¥333.07000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-60°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-268
IXTT68P20T
MOSFET P-CH 200V 68A TO268
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥163.38000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
68A (Tc)
10V
55mOhm @ 34A, 10V
4V @ 250µA
380 nC @ 10 V
±15V
33400 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
9
In Stock
1 : ¥10.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
68A (Tc)
4.5V, 10V
7.2mOhm @ 15A, 4.5V
2.5V @ 500µA
48.2 nC @ 10 V
±20V
3280 pF @ 30 V
-
36W (Tc)
175°C (TJ)
-
-
Through Hole
TO-220SIS
TO-220-3 Full Pack
IXYK1x0xNxxxx
IXFN70N120SK
SICFET N-CH 1200V 68A SOT227B
IXYS
0
In Stock
Check Lead Time
1 : ¥1,042.97000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
20V
34mOhm @ 50A, 20V
4V @ 15mA
161 nC @ 20 V
+20V, -5V
2790 pF @ 1000 V
-
-
-40°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247-4
STW70N65DM6-4
MOSFET N-CH 650V 68A TO247-4
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥109.35000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
68A (Tc)
10V
40mOhm @ 34A, 10V
4.75V @ 250µA
125 nC @ 10 V
±25V
4900 pF @ 100 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4
TO-247-4
IXYK1x0xNxxxx
IXFN94N50P2
MOSFET N-CH 500V 68A SOT227B
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥246.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
68A (Tc)
10V
55mOhm @ 500mA, 10V
5V @ 8mA
220 nC @ 10 V
±30V
13700 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
0
In Stock
Check Lead Time
5,000 : ¥1.68326
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
68A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
2.5V @ 250µA
79 nC @ 10 V
±20V
3650 pF @ 15 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-QFN (5x6)
8-PowerTDFN
0
In Stock
Check Lead Time
5,000 : ¥2.19964
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
68A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
2.5V @ 250µA
79 nC @ 10 V
±20V
3650 pF @ 15 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-QFN (5x6)
8-PowerTDFN
Showing
of 37

68A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.