Single FETs, MOSFETs

Results: 15
Manufacturer
Goford SemiconductorInfineon TechnologiesMicrochip TechnologyonsemiSTMicroelectronicsTaiwan Semiconductor CorporationVishay Siliconix
Series
-HEXFET®OptiMOS®-P2QFET®SIPMOS®STripFET™ IITrenchFET®
Packaging
BagTube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V55 V60 V100 V350 V
Current - Continuous Drain (Id) @ 25°C
180mA (Tj)320mA (Tj)8.8A (Tc)12A (Tc)15A (Tc)18A (Tc)25A (Tc)30A (Tc)31A (Tc)47A (Tc)60A (Tc)90A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V4.5V, 10V5V, 10V10V10V, 5V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V9.3mOhm @ 30A, 10V13mOhm @ 20A, 4.5V14mOhm @ 30A, 10V16mOhm @ 30A, 10V26mOhm @ 23.5A, 10V60mOhm @ 16A, 10V68mOhm @ 6A, 10V70mOhm @ 4A, 10V200mOhm @ 11.3A, 10V200mOhm @ 6A, 10V280mOhm @ 5.3A, 10V3.5Ohm @ 750mA, 10V15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA2V @ 1.54mA2V @ 1mA2.2V @ 250µA2.2V @ 340µA2.4V @ 1mA2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V16.4 nC @ 10 V19 nC @ 10 V23 nC @ 10 V25 nC @ 10 V62 nC @ 10 V63 nC @ 10 V66 nC @ 4.5 V73 nC @ 10 V110 nC @ 10 V190 nC @ 10 V234 nC @ 10 V240 nC @ 10 V
Vgs (Max)
+5V, -16V±12V±15V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V300 pF @ 25 V570 pF @ 25 V760 pF @ 25 V870 pF @ 30 V900 pF @ 10 V1200 pF @ 25 V1428 pF @ 30 V1490 pF @ 25 V1660 pF @ 25 V2000 pF @ 25 V3600 pF @ 25 V7000 pF @ 50 V9200 pF @ 25 V
Power Dissipation (Max)
1W (Ta)1W (Tc)2.4W (Ta), 250W (Tc)2.5W (Ta), 42W (Tc)20W (Tc)40W (Tc)100W (Tc)110W (Tc)128W (Tc)136W (Tc)160W (Tc)375W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO220-3PG-TO220-3-1TO-220TO-220-3TO-220ABTO-251 (IPAK)TO-251AATO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)TO-251-3 Short Leads, IPAK, TO-251AATO-251-3 Stub Leads, IPAK
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
SUP90P06-09L-E3
MOSFET P-CH 60V 90A TO220AB
Vishay Siliconix
1,471
In Stock
1 : ¥43.92000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
4.5V, 10V
9.3mOhm @ 30A, 10V
3V @ 250µA
240 nC @ 10 V
±20V
9200 pF @ 25 V
-
2.4W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
2,189
In Stock
1 : ¥6.40000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
68mOhm @ 6A, 10V
2.2V @ 250µA
16.4 nC @ 10 V
±20V
870 pF @ 30 V
-
20W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
TO-92-3(StandardBody),TO-226_straightlead
TP0606N3-G
MOSFET P-CH 60V 320MA TO92-3
Microchip Technology
1,422
In Stock
1 : ¥9.11000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
60 V
320mA (Tj)
5V, 10V
3.5Ohm @ 750mA, 10V
2.4V @ 1mA
-
±20V
150 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB PKG
IRF5305PBF
MOSFET P-CH 55V 31A TO220AB
Infineon Technologies
33,398
In Stock
1 : ¥11.33000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
60mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-251AA
IRFU9024PBF
MOSFET P-CH 60V 8.8A TO251AA
Vishay Siliconix
3,024
In Stock
1 : ¥12.81000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
8.8A (Tc)
10V
280mOhm @ 5.3A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
570 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220-3
STP60NF06
MOSFET N-CH 60V 60A TO220AB
STMicroelectronics
1,661
In Stock
1 : ¥13.96000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
10V
16mOhm @ 30A, 10V
4V @ 250µA
73 nC @ 10 V
±20V
1660 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP60NF06L
MOSFET N-CH 60V 60A TO220AB
STMicroelectronics
1,309
In Stock
1 : ¥15.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
10V, 5V
14mOhm @ 30A, 10V
1V @ 250µA
66 nC @ 4.5 V
±15V
2000 pF @ 25 V
-
110W (Tc)
-65°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
PG-TO220-3
IPP120P04P4L03AKSA2
MOSFET P-CH 40V 120A TO220-3
Infineon Technologies
305
In Stock
1 : ¥30.29000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
3.4mOhm @ 100A, 10V
2.2V @ 340µA
234 nC @ 10 V
+5V, -16V
15000 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-92-3(StandardBody),TO-226_straightlead
TP2635N3-G
MOSFET P-CH 350V 180MA TO92-3
Microchip Technology
346
In Stock
1 : ¥16.42000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
350 V
180mA (Tj)
2.5V, 10V
15Ohm @ 300mA, 10V
2V @ 1mA
-
±20V
300 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
GT52N10T
G30N02T
N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
Goford Semiconductor
189
In Stock
1 : ¥5.09000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
20 V
30A (Tc)
4.5V
13mOhm @ 20A, 4.5V
1.2V @ 250µA
15 nC @ 10 V
±12V
900 pF @ 10 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GT52N10T
G700P06T
P-60V,25A,RD<70M@-10V,VTH1V~-2.5
Goford Semiconductor
164
In Stock
1 : ¥5.50000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
70mOhm @ 4A, 10V
2.5V @ 250µA
23 nC @ 10 V
±20V
1428 pF @ 30 V
-
100W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB
SUP70101EL-GE3
MOSFET P-CH 100V 120A TO220AB
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥23.40000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
4.5V, 10V
-
2.5V @ 250µA
190 nC @ 10 V
±20V
7000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
FQP47P06
MOSFET P-CH 60V 47A TO220-3
onsemi
0
In Stock
Check Lead Time
1 : ¥26.68000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
47A (Tc)
10V
26mOhm @ 23.5A, 10V
4V @ 250µA
110 nC @ 10 V
±25V
3600 pF @ 25 V
-
160W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
SPP15P10PLHXKSA1
MOSFET P-CH 100V 15A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
500 : ¥7.55028
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
4.5V, 10V
200mOhm @ 11.3A, 10V
2V @ 1.54mA
62 nC @ 10 V
±20V
1490 pF @ 25 V
-
128W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
GT52N10T
G12P10TE
P-100V,-12A,RD(MAX)<200M@-10V,VT
Goford Semiconductor
24
In Stock
1 : ¥6.24000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
12A (Tc)
10V
200mOhm @ 6A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
760 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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of 15

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.