13.8A (Tc) Single FETs, MOSFETs

Results: 26
Manufacturer
Central Semiconductor CorpInfineon TechnologiesNexperia USA Inc.Panjit International Inc.
Series
-CoolMOS™CoolMOS™ C6CoolMOS™ E6CoolMOS™ P6TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Drain to Source Voltage (Vdss)
30 V600 V650 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
20mOhm @ 8A, 10V280mOhm @ 4.4A, 10V280mOhm @ 5.2A, 10V280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3.5V @ 430µA3.5V @ 440µA4V @ 250µA4.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs
10.7 nC @ 5 V25.5 nC @ 10 V27 nC @ 10 V30 nC @ 10 V43 nC @ 10 V45 nC @ 10 V
Vgs (Max)
±20V±30V30V
Input Capacitance (Ciss) (Max) @ Vds
752 pF @ 15 V926 pF @ 400 V950 pF @ 100 V1040 pF @ 400 V1190 pF @ 100 V
Power Dissipation (Max)
6.25W (Tc)32W (Tc)34W (Tc)35.7W (Tc)104W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOITO-220AB-FPG-TO220-3PG-TO220-3-111PG-TO220-FPPG-TO247-3PG-TO247-3-1PG-TO262-3PG-TO262-3-1PG-TO263-3TO-220FP
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3TO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-247-3TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO-220-FP
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
Infineon Technologies
439
In Stock
1 : ¥14.45000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 5.2A, 10V
4.5V @ 430µA
25.5 nC @ 10 V
±20V
1190 pF @ 100 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
AUIRFP4310Z BACK
IPW60R280P6FKSA1
MOSFET N-CH 600V 13.8A TO247-3
Infineon Technologies
252
In Stock
1 : ¥22.82000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 5.2A, 10V
4.5V @ 430µA
25.5 nC @ 10 V
±20V
1190 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
1,998
In Stock
1 : ¥14.45000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
4V @ 250µA
30 nC @ 10 V
±30V
1040 pF @ 400 V
-
35.7W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R280P6ATMA1
MOSFET N-CH 600V 13.8A D2PAK
Infineon Technologies
990
In Stock
1 : ¥20.52000
Cut Tape (CT)
1,000 : ¥8.62029
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 5.2A, 10V
4.5V @ 430µA
25.5 nC @ 10 V
±20V
1190 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
499
In Stock
1 : ¥24.63000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
4V @ 250µA
30 nC @ 10 V
30V
1040 pF @ 400 V
-
35.7W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220-3
IPP65R280C6XKSA1
MOSFET N-CH 650V 13.8A TO220-3
Infineon Technologies
0
In Stock
900
Marketplace
Obsolete
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
AUIRFSL6535 back
IPI65R280C6XKSA1
MOSFET N-CH 650V 13.8A TO262-3
Infineon Technologies
0
In Stock
500
Marketplace
Obsolete
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
PG-TO247-3
IPW60R280C6FKSA1
MOSFET N-CH 600V 13.8A TO247-3
Infineon Technologies
0
In Stock
14,160
Marketplace
Obsolete
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
AUIRFSL6535 back
IPI60R280C6XKSA1
MOSFET N-CH 600V 13.8A TO262-3
Infineon Technologies
0
In Stock
2,121
Marketplace
Obsolete
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-220-3
IPP60R280E6XKSA1
MOSFET N-CH 600V 13.8A TO220-3
Infineon Technologies
0
In Stock
2,027
Marketplace
Obsolete
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO247-3
IPW65R280C6FKSA1
MOSFET N-CH 650V 13.8A TO247-3
Infineon Technologies
0
In Stock
200
Marketplace
Obsolete
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
PG-TO247-3
IPW65R280E6FKSA1
MOSFET N-CH 650V 13.8A TO247-3
Infineon Technologies
0
In Stock
200
Marketplace
Obsolete
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
1,968
In Stock
1 : ¥18.88000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
4V @ 250µA
27 nC @ 10 V
±30V
926 pF @ 400 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
PG-TO-220-FP
IPA65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-FP
Infineon Technologies
0
In Stock
1 : ¥16.91000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-220-3
IPP60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-3
Infineon Technologies
0
In Stock
50 : ¥16.50820
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO-220-FP
IPA60R280C6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
Infineon Technologies
0
In Stock
500 : ¥12.78004
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-220-3
IPP60R280C6XKSA1
MOSFET N-CH 600V 13.8A TO220-3
Infineon Technologies
0
In Stock
500 : ¥12.78004
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO-220-FP
IPA60R280E6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
Infineon Technologies
0
In Stock
500 : ¥12.78004
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-220AB Full Pack
IPA65R280C6XKSA1
MOSFET N-CH 650V 13.8A TO220
Infineon Technologies
0
In Stock
500 : ¥13.44766
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-111
TO-220-3 Full Pack
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R280C6ATMA1
MOSFET N-CH 650V 13.8A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R280C6ATMA1
MOSFET N-CH 600V 13.8A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-SO
PHK13N03LT,518
MOSFET N-CH 30V 13.8A 8SO
Nexperia USA Inc.
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
13.8A (Tc)
4.5V, 10V
20mOhm @ 8A, 10V
2V @ 250µA
10.7 nC @ 5 V
±20V
752 pF @ 15 V
-
6.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-220-3
IPP65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-3
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PG-TO247-3
IPW60R280E6FKSA1
MOSFET N-CH 600V 13.8A TO247-3
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R280E6ATMA1
MOSFET N-CH 650V 13.8A D2PAK
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tape & Reel (TR)
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 26

13.8A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.