Single Bipolar Transistors

Results: 7
Manufacturer
onsemiSTMicroelectronics
Packaging
BulkTube
Transistor Type
NPNNPN - DarlingtonPNP - Darlington
Current - Collector (Ic) (Max)
200 mA5 A8 A10 A
Voltage - Collector Emitter Breakdown (Max)
40 V60 V80 V100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA4V @ 20mA, 5A4V @ 80mA, 8A8V @ 3.3A, 10A
Current - Collector Cutoff (Max)
10µA500µA700µA-
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 4V100 @ 10mA, 1V1000 @ 3A, 3V1000 @ 4A, 4V
Power - Max
625 mW2 W20 W75 W
Frequency - Transition
2MHz4MHz300MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAKTO-220TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
97,154
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
DPAK_369C
MJD122G
TRANS NPN DARL 100V 8A DPAK
onsemi
2,775
In Stock
1 : ¥8.62000
Tube
-
Tube
Active
NPN - Darlington
8 A
100 V
4V @ 80mA, 8A
10µA
1000 @ 4A, 4V
20 W
4MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
TO-220-3
TIP125
TRANS PNP DARL 60V 5A TO220
STMicroelectronics
2,531
In Stock
1 : ¥5.25000
Tube
-
Tube
Active
PNP - Darlington
5 A
60 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP121
TRANS NPN DARL 80V 5A TO220
STMicroelectronics
2,381
In Stock
1 : ¥5.25000
Tube
-
Tube
Active
NPN - Darlington
5 A
80 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP120
TRANS NPN DARL 60V 5A TO220
STMicroelectronics
1,725
In Stock
1 : ¥6.16000
Tube
-
Tube
Active
NPN - Darlington
5 A
60 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP122
TRANS NPN DARL 100V 5A TO220
STMicroelectronics
1,585
In Stock
1 : ¥6.32000
Tube
-
Tube
Active
NPN - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
MJE3055TG
TRANS NPN 60V 10A TO220
onsemi
11,227
In Stock
1 : ¥7.39000
Tube
-
Tube
Active
NPN
10 A
60 V
8V @ 3.3A, 10A
700µA
20 @ 4A, 4V
75 W
2MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.