Single FETs, MOSFETs

Results: 9
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiRohm SemiconductorTexas InstrumentsVishay Siliconix
Series
-CoolMOS™NexFET™OptiMOS™StrongIRFET™2TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V80 V100 V800 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)260mA (Ta)4A (Tc)15A (Ta), 80A (Tc)20A (Ta), 120A (Tc)40A (Tc)46A (Tc)100A (Ta)457A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
0.79mOhm @ 80A, 10V2.2mOhm @ 28A, 10V3.85mOhm @ 60A, 10V6mOhm @ 20A, 10V9.9mOhm @ 20A, 10V10.8mOhm @ 20A, 10V1.3Ohm @ 2.5A, 10V2.5Ohm @ 240mA, 10V5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 14µA2.3V @ 250µA2.5V @ 100µA2.5V @ 250µA2.8V @ 250µA3.3V @ 52µA3.6V @ 720µA3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
0.81 nC @ 5 V3.1 nC @ 4.5 V31 nC @ 10 V41.3 nC @ 10 V49 nC @ 10 V53 nC @ 10 V68 nC @ 10 V174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
26.7 pF @ 25 V34 pF @ 30 V570 pF @ 100 V1300 pF @ 30 V1630 pF @ 50 V2090 pF @ 30 V3000 pF @ 30 V4230 pF @ 30 V12920 pF @ 40 V
Power Dissipation (Max)
200mW (Ta)300mW (Tj)2.2W (Ta), 62.5W (Tc)3W (Ta), 107W (Tc)3.1W (Ta), 195W (Tc)5W (Ta), 62.5W (Tc)36W (Tc)63W (Tc)325W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-HPSOF8-VSON-CLIP (5x6)PG-TO252-3PG-TSDSON-8-FLPOWERDI3333-8PowerPAK® SO-8SOT-23-3 (TO-236)SST3
Package / Case
8-PowerSFN8-PowerTDFN8-PowerVDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
onsemi
440,350
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.32434
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TSDSON-8
BSZ099N06LS5ATMA1
MOSFET N-CH 60V 46A TSDSON
Infineon Technologies
19,524
In Stock
1 : ¥7.55000
Cut Tape (CT)
5,000 : ¥2.97945
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
4.5V, 10V
9.9mOhm @ 20A, 10V
2.3V @ 14µA
3.1 nC @ 4.5 V
±20V
1300 pF @ 30 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
PowerDI3333-8
DMT6007LFG-7
MOSFET N-CH 60V 15A PWRDI3333
Diodes Incorporated
13,018
In Stock
1 : ¥9.03000
Cut Tape (CT)
2,000 : ¥3.73945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta), 80A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
2V @ 250µA
41.3 nC @ 10 V
±20V
2090 pF @ 30 V
-
2.2W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
POWERDI3333-8
8-PowerVDFN
CSD18540Q5B
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
5,942
In Stock
1 : ¥19.38000
Cut Tape (CT)
2,500 : ¥8.74935
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
RUC002N05T116
BSS84AHZGT116
PCH -60V -0.23A, SOT-23, SMALL S
Rohm Semiconductor
8,968
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
5.3Ohm @ 230mA, 10V
2.5V @ 100µA
-
±20V
34 pF @ 30 V
-
200mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
1,436
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.27329
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
20A (Ta), 120A (Tc)
6V, 10V
3.85mOhm @ 60A, 10V
3.3V @ 52µA
68 nC @ 10 V
±20V
3000 pF @ 30 V
-
3W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
SPD04N80C3ATMA1
MOSFET N-CH 800V 4A TO252-3
Infineon Technologies
21,405
In Stock
1 : ¥13.30000
Cut Tape (CT)
2,500 : ¥5.99053
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4A (Tc)
10V
1.3Ohm @ 2.5A, 10V
3.9V @ 240µA
31 nC @ 10 V
±20V
570 pF @ 100 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPAK SO-8
SIR876ADP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥13.22000
Cut Tape (CT)
3,000 : ¥5.95526
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
10.8mOhm @ 20A, 10V
2.8V @ 250µA
49 nC @ 10 V
±20V
1630 pF @ 50 V
-
5W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-HPSOF Top View
NTBLS0D8N08XTXG
MOSFET, POWER 80V SINGLE N-CHANN
onsemi
0
In Stock
Check Lead Time
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.43640
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
457A (Tc)
6V, 10V
0.79mOhm @ 80A, 10V
3.6V @ 720µA
174 nC @ 10 V
±20V
12920 pF @ 40 V
-
325W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-HPSOF
8-PowerSFN
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.