Single FETs, MOSFETs

Results: 19
Manufacturer
EPCInfineon TechnologiesSTMicroelectronicsToshiba Semiconductor and StorageTransphormWolfspeed, Inc.
Series
-CoolMOS™CoolMOS™PFD7DTMOSIVeGaN®MDmesh™ M2SuperGaN®SuperGaN™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveNot For New DesignsObsolete
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V500 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)5.2A (Ta)6.5A (Tc)13A (Tc)16A (Tc)17A (Tc)18.9A (Tc)29A (Tc)34A (Tc)35A (Tc)36A (Tc)37A (Tc)46.5A (Tc)47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V8V10V12V13V15V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 25A, 5V18mOhm @ 60A, 10V41mOhm @ 30A, 10V60mOhm @ 22A, 10V60mOhm @ 25A, 10V79mOhm @ 13.2A, 15V85mOhm @ 16A, 10V85mOhm @ 18A, 10V110mOhm @ 12A, 10V180mOhm @ 11A, 8V180mOhm @ 8.5A, 10V230mOhm @ 8A, 10V280mOhm @ 4.2A, 13V312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id
2.5V @ 7mA2.6V @ 500µA3.5V @ 170µA3.5V @ 350µA3.6V @ 3.6mA4V @ 250µA4.1V @ 1.8mA4.5V @ 50µA4.6V @ 700µA4.7V @ 700µA4.8V @ 1mA4.8V @ 2mA4.8V @ 500µA4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V8 nC @ 10 V8.4 nC @ 10 V9 nC @ 10 V9.3 nC @ 4.5 V9.6 nC @ 8 V10.5 nC @ 10 V14.4 nC @ 10 V16.3 nC @ 5 V22 nC @ 10 V24 nC @ 10 V29 nC @ 10 V32.6 nC @ 10 V36 nC @ 10 V
Vgs (Max)
+6V, -4V±18V+19V, -8V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 400 V380 pF @ 300 V598 pF @ 400 V600 pF @ 400 V638 pF @ 400 V760 pF @ 400 V760 pF @ 480 V773 pF @ 100 V818 pF @ 400 V1000 pF @ 400 V1060 pF @ 100 V1170 pF @ 600 V1500 pF @ 400 V2366 pF @ 50 V
Power Dissipation (Max)
21W (Tc)26W (Tc)30W (Tc)52W (Tc)60W (Tc)65.8W (Tc)92W (Tc)96W (Tc)119W (Tc)131W (Tc)132W (Tc)150W (Tc)156W (Tc)187W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-PQFN (8x8)7-QFN (3x5)8-PQFN (8x8)IPAKPG-TO220-3-1PG-TO251-3TO-220ABTO-220FPTO-247-3TO-247-4L
Package / Case
3-PowerDFN3-PowerTDFN7-PowerWQFN8-PowerTDFNTO-220-3TO-220-3 Full PackTO-247-3TO-247-4TO-251-3 Short Leads, IPAK, TO-251AATO-251-3 Stub Leads, IPAK
Stocking Options
Environmental Options
Media
Marketplace Product
19Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2306ENGRT
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
5,417
In Stock
1 : ¥52.13000
Cut Tape (CT)
3,000 : ¥20.52378
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
48A (Ta)
5V
3.8mOhm @ 25A, 5V
2.5V @ 7mA
16.3 nC @ 5 V
+6V, -4V
2366 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
TP65H150G4PS
TP65H070G4PS
GANFET N-CH 650V 29A TO220
Transphorm
947
In Stock
1 : ¥71.01000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
10V
85mOhm @ 18A, 10V
4.7V @ 700µA
9 nC @ 10 V
±20V
638 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
140
In Stock
1 : ¥264.84000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
18mOhm @ 60A, 10V
4.8V @ 2mA
100 nC @ 10 V
±20V
5218 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-220-3
IPP50R280CEXKSA1
MOSFET N-CH 500V 13A TO220-3
Infineon Technologies
460
In Stock
1 : ¥12.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
13A (Tc)
13V
280mOhm @ 4.2A, 13V
3.5V @ 350µA
32.6 nC @ 10 V
±20V
773 pF @ 100 V
-
92W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
PQFN_8x8
TP65H300G4LSG-TR
GANFET N-CH 650V 6.5A 3PQFN
Transphorm
6,433
In Stock
1 : ¥29.47000
Cut Tape (CT)
3,000 : ¥13.58499
Tube
-
Cut Tape (CT)
Digi-Reel®
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
6.5A (Tc)
8V
312mOhm @ 5A, 8V
2.6V @ 500µA
9.6 nC @ 8 V
±18V
760 pF @ 400 V
-
21W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (8x8)
3-PowerDFN
TP65H150G4LSG
TP65H150G4LSG
GAN FET N-CH 650V PQFN
Transphorm
2,734
In Stock
1 : ¥41.54000
Cut Tape (CT)
3,000 : ¥19.25311
Tray
-
Cut Tape (CT)
Digi-Reel®
Tray
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
13A (Tc)
10V
180mOhm @ 8.5A, 10V
4.8V @ 500µA
8 nC @ 10 V
±20V
598 pF @ 400 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (8x8)
3-PowerTDFN
TO220
TPH3206PS
GANFET N-CH 600V 17A TO220AB
Transphorm
304
In Stock
1 : ¥78.15000
Tube
-
Tube
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
600 V
17A (Tc)
10V
180mOhm @ 11A, 8V
2.6V @ 500µA
9.3 nC @ 4.5 V
±18V
760 pF @ 480 V
-
96W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
Discrete Semiconductor-FET
TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
294
In Stock
1 : ¥115.34000
Tube
-
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
46.5A (Tc)
12V
41mOhm @ 30A, 10V
4.8V @ 1mA
36 nC @ 10 V
±20V
1500 pF @ 400 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TP65H035G4WSQA
TP65H035G4WSQA
650 V 46.5 GAN FET
Transphorm
241
In Stock
1 : ¥158.61000
Tube
-
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
47.2A (Tc)
10V
41mOhm @ 30A, 10V
4.8V @ 1mA
22 nC @ 10 V
±20V
1500 pF @ 400 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
Discrete Semiconductor-FET
TP65H050WS
GANFET N-CH 650V 34A TO247-3
Transphorm
311
In Stock
1 : ¥145.06000
Tube
-
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
34A (Tc)
12V
60mOhm @ 22A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
119W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
239
In Stock
1 : ¥52.87000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
18.9A (Tc)
10V
110mOhm @ 12A, 10V
4.1V @ 1.8mA
14.4 nC @ 10 V
±20V
818 pF @ 400 V
-
65.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TP65H070G4LSGB-TR
TP65H070G4LSGB-TR
GANFET N-CH 650V 29A QFN8X8
Transphorm
2,964
In Stock
1 : ¥88.58000
Cut Tape (CT)
3,000 : ¥47.09509
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
29A (Tc)
10V
85mOhm @ 16A, 10V
4.6V @ 700µA
8.4 nC @ 10 V
±20V
600 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (8x8)
8-PowerTDFN
TP65H050G4YS
TP65H050G4YS
650 V 35 A GAN FET HIGH VOLTAGE
Transphorm
390
In Stock
1 : ¥117.89000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
35A (Tc)
10V
60mOhm @ 22A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
132W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
E3M0060065K
60M 650V SIC AUTOMOTIVE MOSFET
Wolfspeed, Inc.
13
In Stock
1 : ¥131.84000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.6mA
49 nC @ 15 V
+19V, -8V
1170 pF @ 600 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-251-3 Stub
IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3
Infineon Technologies
0
In Stock
43,500
Marketplace
944 : ¥2.33059
Bulk
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
4.7A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
-
26W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
TP65H050G4WS
TP65H050G4WS
650 V 34 A GAN FET
Transphorm
89
In Stock
1 : ¥117.89000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
34A (Tc)
10V
60mOhm @ 22A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
119W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-220-F
STF24N65M2
MOSFET N-CH 650V 16A TO220FP
STMicroelectronics
87
In Stock
1 : ¥23.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
16A (Tc)
10V
230mOhm @ 8A, 10V
4V @ 250µA
29 nC @ 10 V
±25V
1060 pF @ 100 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TP65H050G4WS
TP65H050WSQA
GANFET N-CH 650V 36A TO247-3
Transphorm
21
In Stock
1 : ¥155.82000
Tube
-
Tube
Active
N-Channel
GaNFET (Cascode Gallium Nitride FET)
650 V
36A (Tc)
10V
60mOhm @ 25A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
55
In Stock
1 : ¥14.45000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
5.2A (Ta)
10V
1.22Ohm @ 2.6A, 10V
3.5V @ 170µA
10.5 nC @ 10 V
±30V
380 pF @ 300 V
-
60W (Tc)
150°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Stub Leads, IPAK
Showing
of 19

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.