Single FETs, MOSFETs

Results: 5
Manufacturer
onsemiRohm SemiconductorTexas Instruments
Series
-NexFET™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)4.3A (Ta)15A (Ta), 56A (Tc)21A (Ta), 60A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V3V, 8V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 24A, 8V7.5mOhm @ 17A, 8V9.2mOhm @ 25A, 10V55mOhm @ 4.3A, 10V3.8Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1.4V @ 250µA1.8V @ 250µA2V @ 35µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V8.4 nC @ 4.5 V9.5 nC @ 10 V18 nC @ 10 V
Vgs (Max)
+10V, -8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V650 pF @ 25 V880 pF @ 25 V955 pF @ 15 V1300 pF @ 12.5 V
Power Dissipation (Max)
150mW (Ta)1.6W (Ta)2.7W (Ta)3W (Ta)3.6W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)8-VSON-CLIP (3.3x3.3)EMT3F (SOT-416FL)SuperSOT™-6
Package / Case
8-PowerTDFN8-PowerTDFN, 5 LeadsSC-89, SOT-490SOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SG6858TZ
FDC5612
MOSFET N-CH 60V 4.3A SUPERSOT6
onsemi
24,565
In Stock
96,000
Factory
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4.3A (Ta)
6V, 10V
55mOhm @ 4.3A, 10V
4V @ 250µA
18 nC @ 10 V
±20V
650 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
EMT3F
RE1C001ZPTL
MOSFET P-CH 20V 100MA EMT3F
Rohm Semiconductor
10,597
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38482
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.8Ohm @ 100mA, 4.5V
1V @ 100µA
-
±10V
15 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
5-DFN, 8-SO Flat Lead
NTMFS5C673NLT1G
MOSFET N-CH 60V 5DFN
onsemi
2,695
In Stock
72,000
Factory
1 : ¥6.65000
Cut Tape (CT)
1,500 : ¥2.84979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
9.2mOhm @ 25A, 10V
2V @ 35µA
9.5 nC @ 10 V
±20V
880 pF @ 25 V
-
3.6W (Ta), 46W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
CSD1632x Series 8-SON
CSD17304Q3
MOSFET N-CH 30V 15A/56A 8VSON
Texas Instruments
5,710
In Stock
1 : ¥6.90000
Cut Tape (CT)
2,500 : ¥2.86572
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 56A (Tc)
3V, 8V
7.5mOhm @ 17A, 8V
1.8V @ 250µA
6.6 nC @ 4.5 V
+10V, -8V
955 pF @ 15 V
-
2.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
CSD16323Q3
CSD16323Q3
MOSFET N-CH 25V 21A/60A 8VSON
Texas Instruments
6,910
In Stock
1 : ¥9.19000
Cut Tape (CT)
2,500 : ¥3.81467
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
21A (Ta), 60A (Tc)
3V, 8V
4.5mOhm @ 24A, 8V
1.4V @ 250µA
8.4 nC @ 4.5 V
+10V, -8V
1300 pF @ 12.5 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.