Single FETs, MOSFETs

Results: 14
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.Rohm SemiconductorVishay Siliconix
Series
-CoolMOS™ CFD7CoolMOS™ P7CoolSiC™EEFHEXFET®SIPMOS®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
45 V60 V150 V600 V700 V1200 V
Current - Continuous Drain (Id) @ 25°C
21mA (Ta)2.7A (Ta)3A (Ta), 8A (Tc)7.2A (Ta), 23.6A (Tc)7.3A (Tc)8A (Ta)12A (Tc)12.5A (Tc)13A (Tc)16A (Tc)19A (Tc)28A37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V4V, 10V4.5V, 10V5V10V15V, 18V
Rds On (Max) @ Id, Vgs
7mOhm @ 10A, 5V50mOhm @ 7A, 10V80mOhm @ 11.8A, 10V91mOhm @ 8A, 10V92mOhm @ 2.7A, 10V105mOhm @ 4.5A, 10V120mOhm @ 3A, 10V145mOhm @ 6.8A, 10V201mOhm @ 9.5A, 10V240mOhm @ 5.5A, 10V280mOhm @ 3.8A, 10V286mOhm @ 4A, 18V360mOhm @ 3A, 10V500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 5mA2.5V @ 25µA2.7V @ 8µA3V @ 1mA3V @ 250µA3.2V @ 250µA3.5V @ 150µA4V @ 190µA4V @ 590µA4.5V @ 340µA5V @ 250µA5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
2.1 nC @ 5 V2.5 nC @ 4.5 V7.6 nC @ 5 V8.5 nC @ 18 V9 nC @ 5 V16.4 nC @ 10 V17.2 nC @ 10 V18 nC @ 10 V23 nC @ 10 V25 nC @ 10 V31 nC @ 10 V32 nC @ 10 V51 nC @ 10 V
Vgs (Max)
+6V, -4V±16V±20V+23V, -7V±30V
Input Capacitance (Ciss) (Max) @ Vds
28 pF @ 25 V289 pF @ 800 V290 pF @ 25 V517 pF @ 400 V724 pF @ 30 V761 pF @ 400 V783 pF @ 100 V865 pF @ 85 V969 pF @ 30 V1000 pF @ 10 V1118 pF @ 100 V1330 pF @ 400 V1377 pF @ 30 V2180 pF @ 400 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
500mW (Ta)1.2W (Ta)1.25W (Ta)1.9W (Ta)2.3W (Ta), 15W (Tc)15W (Tc)28W53W (Tc)59.4W (Tc)75W (Tc)78W (Tc)83W (Tc)129W (Tc)156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-FCLGA (3.2x2.2)DFN2020MD-6Micro3™/SOT-23PG-SOT23PG-TO247-3PG-TO247-3-41PG-TO252-3TO-252TO-252-3TO-252AATO-252AA (DPAK)TSOT-23-6
Package / Case
3-VLGA6-UDFN Exposed PadSOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0060TRPBF
MOSFET N-CH 60V 2.7A SOT23
Infineon Technologies
18,150
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.13547
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
92mOhm @ 2.7A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
AP6320x
DMP6110SVT-7
MOSFET P-CH 60V 7.3A TSOT26
Diodes Incorporated
62,383
In Stock
1,659,000
Factory
1 : ¥4.84000
Cut Tape (CT)
3,000 : ¥1.61988
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.3A (Tc)
4.5V, 10V
105mOhm @ 4.5A, 10V
3V @ 250µA
17.2 nC @ 10 V
±20V
969 pF @ 30 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TSOT-23-6
SOT-23-6 Thin, TSOT-23-6
TO252-3
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
Infineon Technologies
105,829
In Stock
1 : ¥5.50000
Cut Tape (CT)
2,500 : ¥2.94115
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
12.5A (Tc)
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
-
59.4W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
Infineon Technologies
4,886
In Stock
1 : ¥10.10000
Cut Tape (CT)
2,500 : ¥4.18444
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
280mOhm @ 3.8A, 10V
4V @ 190µA
18 nC @ 10 V
±20V
761 pF @ 400 V
-
53W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO247-3
IPW60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-3
Infineon Technologies
867
In Stock
1 : ¥41.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
129W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
SOT-23-3
BSS126H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
Infineon Technologies
111,687
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.26954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
21mA (Ta)
0V, 10V
500Ohm @ 16mA, 10V
2.7V @ 8µA
2.1 nC @ 5 V
±20V
28 pF @ 25 V
Depletion Mode
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
TO-252-2
DMPH6050SK3-13
MOSFET P-CH 60V 7.2A/23.6A TO252
Diodes Incorporated
33,218
In Stock
320,000
Factory
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.96165
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.2A (Ta), 23.6A (Tc)
4.5V, 10V
50mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1377 pF @ 30 V
-
1.9W (Ta)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
RB098BM-40FNSTL
RD3H080SPTL1
MOSFET P-CH 45V 8A TO252
Rohm Semiconductor
2,359
In Stock
1 : ¥10.02000
Cut Tape (CT)
2,500 : ¥4.13124
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
45 V
8A (Ta)
4V, 10V
91mOhm @ 8A, 10V
3V @ 1mA
9 nC @ 5 V
±20V
1000 pF @ 10 V
-
15W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
6,137
In Stock
1 : ¥22.66000
Cut Tape (CT)
2,500 : ¥11.02495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
145mOhm @ 6.8A, 10V
4.5V @ 340µA
31 nC @ 10 V
±20V
1330 pF @ 400 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
GAN7R0-150LBEZ
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (G
Nexperia USA Inc.
3,532
In Stock
1 : ¥25.04000
Cut Tape (CT)
2,500 : ¥10.37884
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
28A
5V
7mOhm @ 10A, 5V
2.1V @ 5mA
7.6 nC @ 5 V
+6V, -4V
865 pF @ 85 V
-
28W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
3-FCLGA (3.2x2.2)
3-VLGA
TO-247-3 AC EP
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
Infineon Technologies
1,232
In Stock
1 : ¥54.60000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
286mOhm @ 4A, 18V
5.7V @ 1.6mA
8.5 nC @ 18 V
+23V, -7V
289 pF @ 800 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-252
SIHD240N60E-GE3
MOSFET N-CH 600V 12A DPAK
Vishay Siliconix
3,025
In Stock
1 : ¥14.12000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
240mOhm @ 5.5A, 10V
5V @ 250µA
23 nC @ 10 V
±30V
783 pF @ 100 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
SIHD186N60EF-GE3
MOSFET N-CH 600V 19A DPAK
Vishay Siliconix
6,670
In Stock
1 : ¥17.16000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
19A (Tc)
10V
201mOhm @ 9.5A, 10V
5V @ 250µA
32 nC @ 10 V
±30V
1118 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
6-DFN2020MD_View 2
BUK6D120-60PX
MOSFET P-CH 60V 3A/8A 6DFN
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : ¥5.66000
Cut Tape (CT)
3,000 : ¥1.16535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta), 8A (Tc)
4.5V, 10V
120mOhm @ 3A, 10V
3.2V @ 250µA
18 nC @ 10 V
±20V
724 pF @ 30 V
-
2.3W (Ta), 15W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
Showing
of 14

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.