Single FETs, MOSFETs

Results: 16
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedInfineon TechnologiesonsemiPanjit International Inc.Rohm SemiconductorTexas InstrumentsToshiba Semiconductor and Storage
Series
-NexFET™OptiMOS™OptiMOS™ 5SIPMOS®U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V45 V60 V80 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)170mA (Ta)200mA (Ta)230mA (Ta)270mA (Ta)330mA (Ta)620mA (Ta)900mA (Ta)2A (Ta)10A (Ta)34A (Tc)76A (Tc)80A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V1.5mOhm @ 150A, 10V2.8mOhm @ 40A, 10V8.9mOhm @ 10A, 4.5V32mOhm @ 34A, 10V80mOhm @ 2A, 10V133mOhm @ 5A, 10V650mOhm @ 900mA, 10V800mOhm @ 620mA, 10V2Ohm @ 330mA, 10V3.5Ohm @ 230mA, 10V4.2Ohm @ 500mA, 10V5Ohm @ 200mA, 10V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1.15V @ 250µA1.4V @ 26µA2V @ 11µA2V @ 160µA2V @ 1mA2V @ 20µA2V @ 80µA2.4V @ 300µA2.5V @ 1mA2.5V @ 250µA2.6V @ 1mA3V @ 250µA3.8V @ 250µA3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
1.4 nC @ 10 V1.5 nC @ 10 V1.8 nC @ 10 V3.57 nC @ 10 V5 nC @ 10 V6 nC @ 10 V8 nC @ 10 V9.7 nC @ 4.5 V18 nC @ 10 V29 nC @ 10 V39 nC @ 10 V211 nC @ 10 V231 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V19.1 pF @ 25 V20 pF @ 25 V41 pF @ 25 V60 pF @ 25 V78 pF @ 25 V87 pF @ 25 V176 pF @ 25 V448 pF @ 15 V500 pF @ 15 V700 pF @ 25 V1790 pF @ 10 V2350 pF @ 100 V3200 pF @ 22.5 V
Power Dissipation (Max)
225mW (Ta)300mW (Ta)350mW (Ta)360mW (Ta)380mW (Ta)500mW (Ta)1.25W (Ta)2.67W (Ta), 104W (Tc)2.8W (Ta), 69W (Tc)20W (Tc)136W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)8-VSONP (3x3.3)PG-HDSOP-16-2PG-HSOF-8-1PG-SC59-3PG-SOT23PG-SOT323PG-TO252-3SOT-23SOT-23-3SOT-23-3 (TO-236)TO-252
Package / Case
8-PowerSFN8-PowerVDFN16-PowerSOP ModuleSC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123-7-F
MOSFET N-CH 100V 170MA SOT23-3
Diodes Incorporated
153,992
In Stock
11,241,000
Factory
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35562
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
Infineon Technologies
111,248
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.78379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
330mA (Ta)
4.5V, 10V
2Ohm @ 330mA, 10V
2V @ 80µA
3.57 nC @ 10 V
±20V
78 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
271,253
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
Infineon Technologies
120,807
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.54535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
1.4 nC @ 10 V
±20V
41 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP10H4D2S-7
MOSFET P-CH 100V 270MA SOT23
Diodes Incorporated
69,452
In Stock
2,514,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71143
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
270mA (Ta)
4V, 10V
4.2Ohm @ 500mA, 10V
3V @ 250µA
1.8 nC @ 10 V
±20V
87 pF @ 25 V
-
380mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
Infineon Technologies
307,827
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.03405
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
80mOhm @ 2A, 10V
2V @ 11µA
5 nC @ 10 V
±20V
500 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
Texas Instruments
50,698
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98840
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
76A (Tc)
1.8V, 4.5V
8.9mOhm @ 10A, 4.5V
1.15V @ 250µA
9.7 nC @ 4.5 V
±12V
1790 pF @ 10 V
-
2.8W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
TO252-3
IPD320N20N3GATMA1
MOSFET N-CH 200V 34A TO252-3
Infineon Technologies
2,987
In Stock
1 : ¥22.17000
Cut Tape (CT)
2,500 : ¥10.79284
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
34A (Tc)
10V
32mOhm @ 34A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
x-xSOF-8-1
IPT015N10N5ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
22,351
In Stock
1 : ¥49.92000
Cut Tape (CT)
2,000 : ¥26.53364
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 250µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IAUS300N08S5N012TATMA1
IAUS300N08S5N012TATMA1
MOSFET N-CH 80V 300A HDSOP-16-2
Infineon Technologies
1,797
In Stock
1 : ¥55.58000
Cut Tape (CT)
1,800 : ¥31.53482
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tj)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
SOT-323
BSS84PWH6327XTSA1
MOSFET P-CH 60V 150MA SOT323-3
Infineon Technologies
22,274
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.50028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
150mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2V @ 20µA
1.5 nC @ 10 V
±20V
19.1 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT323
SC-70, SOT-323
SOT-23-3
BSR315PH6327XTSA1
MOSFET P-CH 60V 620MA SC59
Infineon Technologies
30,637
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.44197
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
620mA (Ta)
4.5V, 10V
800mOhm @ 620mA, 10V
2V @ 160µA
6 nC @ 10 V
±20V
176 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SC59-3
TO-236-3, SC-59, SOT-23-3
RB098BM-40FNSTL
RD3P100SNTL1
MOSFET N-CH 100V 10A TO252
Rohm Semiconductor
16,501
In Stock
1 : ¥11.90000
Cut Tape (CT)
2,500 : ¥4.46410
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Ta)
4V, 10V
133mOhm @ 5A, 10V
2.5V @ 1mA
18 nC @ 10 V
±20V
700 pF @ 25 V
-
20W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
4,661
In Stock
1 : ¥10.92000
Cut Tape (CT)
5,000 : ¥2.54504
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
45 V
80A (Tc)
4.5V, 10V
2.8mOhm @ 40A, 10V
2.4V @ 300µA
39 nC @ 10 V
±20V
3200 pF @ 22.5 V
-
2.67W (Ta), 104W (Tc)
175°C
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
93,709
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
5,037
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.02776
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
900mA (Ta)
4.5V, 10V
650mOhm @ 900mA, 10V
2.5V @ 250µA
8 nC @ 10 V
±20V
448 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.