Single FETs, MOSFETs

Results: 20
Manufacturer
EPConsemiQorvoRohm SemiconductorSTMicroelectronicsTexas InstrumentsWolfspeed, Inc.
Series
-C2M™C3M™E-SerieseGaN®NexFET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
60 V650 V750 V900 V1200 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)7.6A (Tc)13A (Ta), 50A (Tc)17A (Tc)20A (Tc)21A (Tc)22A (Tc)30A (Tc)31A (Tc)32A (Tc)36A (Tc)44A (Tc)63A (Tc)66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V15V18V20V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 31A, 5V9.8mOhm @ 14A, 10V22.3mOhm @ 75A, 15V23mOhm @ 20A, 12V28.8mOhm @ 50A, 15V43mOhm @ 40A, 15V53.5mOhm @ 33.3A, 15V78mOhm @ 20A, 15V90mOhm @ 20A, 15V97.5mOhm @ 17.9A, 15V98mOhm @ 20A, 20V100mOhm @ 4A, 10V104mOhm @ 10A, 18V110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2V @ 250µA2.3V @ 250µA2.5V @ 16mA3.5V @ 1mA (Typ)3.5V @ 5mA3.6V @ 1.86mA3.6V @ 11.5mA3.6V @ 17.7mA3.6V @ 1mA3.6V @ 2.33mA3.6V @ 23mA3.6V @ 5mA3.6V @ 9.5mA4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 5 V19 nC @ 15 V20 nC @ 10 V22 nC @ 10 V26 nC @ 15 V28 nC @ 15 V30.4 nC @ 15 V37.8 nC @ 15 V38 nC @ 15 V45 nC @ 20 V51 nC @ 15 V56 nC @ 20 V57 nC @ 15 V60 nC @ 18 V
Vgs (Max)
+6V, -4V+15V, -4V+18V, -8V+19V, -8V±20V+22V, -4V+25V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 25 V345 pF @ 1000 V632 pF @ 1000 V640 pF @ 400 V650 pF @ 400 V660 pF @ 600 V785 pF @ 800 V950 pF @ 1000 V1350 pF @ 1000 V1422 pF @ 100 V1480 pF @ 1000 V1670 pF @ 800 V1770 pF @ 30 V1780 pF @ 30 V
Power Dissipation (Max)
3W (Ta)3.1W (Ta), 77W (Tc)50W (Tc)86W (Tc)97W (Tc)98W (Tc)113.6W (Tc)125W (Tc)145W (Tc)165W175W (Tc)192W (Tc)283W (Tc)326W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-VSONP (5x6)D2PAK-7DieHiP247™ Long LeadsSOT-223-4TO-247-3TO-247-4LTO-247NTO-263-7
Package / Case
8-PowerTDFNDieTO-247-3TO-247-4TO-261-4, TO-261AATO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD18534Q5A
MOSFET N-CH 60V 13A/50A 8VSON
Texas Instruments
29,094
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,500 : ¥3.19181
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13A (Ta), 50A (Tc)
4.5V, 10V
9.8mOhm @ 14A, 10V
2.3V @ 250µA
22 nC @ 10 V
±20V
1770 pF @ 30 V
-
3.1W (Ta), 77W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
2,753
In Stock
1 : ¥60.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
eGaN Series
EPC2020
GANFET N-CH 60V 90A DIE
EPC
2,789
In Stock
1 : ¥67.48000
Cut Tape (CT)
500 : ¥42.53746
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
60 V
90A (Ta)
5V
2.2mOhm @ 31A, 5V
2.5V @ 16mA
16 nC @ 5 V
+6V, -4V
1780 pF @ 30 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
TO-247-3L
UJ4C075018K3S
SICFET N-CH 750V 81A TO247-3
Qorvo
5,756
In Stock
1 : ¥142.52000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
81A (Tc)
-
23mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0065090D
SICFET N-CH 900V 36A TO247-3
Wolfspeed, Inc.
2,488
In Stock
1 : ¥158.94000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
36A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30.4 nC @ 15 V
+18V, -8V
660 pF @ 600 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
Wolfspeed, Inc.
5,446
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
289
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.5mA
101 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
Wolfspeed, Inc.
1,554
In Stock
1 : ¥240.05000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0021120D
SICFET N-CH 1200V 100A TO247-3
Wolfspeed, Inc.
1,120
In Stock
1 : ¥336.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
160 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0016120D
SICFET N-CH 1200V 115A TO247-3
Wolfspeed, Inc.
1,407
In Stock
1 : ¥597.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
115A (Tc)
15V
22.3mOhm @ 75A, 15V
3.6V @ 23mA
207 nC @ 15 V
+15V, -4V
6085 pF @ 1000 V
-
556W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
580
In Stock
1 : ¥77.34000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥77.34000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
1,944
In Stock
1 : ¥91.21000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
38 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NVHL080N120SC1
SICFET N-CH 1200V 44A TO247-3
onsemi
365
In Stock
27,000
Factory
1 : ¥126.43000
Tube
-
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
44A (Tc)
20V
110mOhm @ 20A, 20V
4.3V @ 5mA
56 nC @ 20 V
+25V, -15V
1670 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
C2D10120D
E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FET
Wolfspeed, Inc.
382
In Stock
1 : ¥170.85000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
57 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
Automotive
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0032120D
SICFET N-CH 1200V 63A TO247-3
Wolfspeed, Inc.
225
In Stock
1 : ¥208.94000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
63A (Tc)
15V
43mOhm @ 40A, 15V
3.6V @ 11.5mA
114 nC @ 15 V
+15V, -4V
3357 pF @ 1000 V
-
283W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065090J
C3M0120065J
650V 120M SIC MOSFET
Wolfspeed, Inc.
1,470
In Stock
1 : ¥54.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
21A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
26 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
86W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247N
SCT3080KLHRC11
SICFET N-CH 1200V 31A TO247N
Rohm Semiconductor
833
In Stock
1 : ¥148.10000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
31A (Tc)
18V
104mOhm @ 10A, 18V
5.6V @ 5mA
60 nC @ 18 V
+22V, -4V
785 pF @ 800 V
-
165W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
SCTWA30N120
SCTWA20N120
IC POWER MOSFET 1200V HIP247
STMicroelectronics
526
In Stock
1 : ¥111.74000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
20V
239mOhm @ 10A, 20V
3.5V @ 1mA (Typ)
45 nC @ 20 V
+25V, -10V
650 pF @ 400 V
-
175W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
HiP247™ Long Leads
TO-247-3
SOT223-3L
NDT3055L
MOSFET N-CH 60V 4A SOT-223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥8.29000
Cut Tape (CT)
4,000 : ¥3.43402
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
4A (Ta)
4.5V, 10V
100mOhm @ 4A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
345 pF @ 25 V
-
3W (Ta)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.