Single FETs, MOSFETs

Results: 16
Manufacturer
Fairchild SemiconductorInfineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
CoolMOS™CoolMOS™ C6CoolMOS™ C7CoolMOS™ CFD7CoolMOS™ CFD7ACoolMOS™ CFSDCoolMOS™ P6CoolMOS™ P7EHEXFET®MDmesh™ II PlusSuperFET® II
Packaging
BulkTube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
150 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)47A (Tc)50A (Tc)54A (Tc)60A (Tc)63A (Tc)68A (Tc)75A (Tc)76A (Tc)77A (Tc)77.5A (Tc)83.2A (Tc)104A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 62A, 10V19mOhm @ 58.3A, 10V24mOhm @ 42.4A, 10V35mOhm @ 35.8A, 10V37mOhm @ 29.5A, 10V37mOhm @ 32.6A, 10V37mOhm @ 33.1A, 10V39mOhm @ 32A, 10V40mOhm @ 24.9A, 10V40mOhm @ 34A, 10V41mOhm @ 24.8A, 10V41mOhm @ 35.5A, 10V41mOhm @ 38A, 10V45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
3.5V @ 3.3mA3.5V @ 3mA3.9V @ 2.7mA4V @ 1.24mA4V @ 1.48mA4V @ 2.92mA4V @ 250µA4V @ 590µA4.5V @ 1.24mA4.5V @ 1.63mA4.5V @ 1.79mA4.5V @ 2.12mA4.5V @ 2.96mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V102 nC @ 10 V107 nC @ 10 V118 nC @ 10 V120 nC @ 10 V121 nC @ 10 V126 nC @ 10 V136 nC @ 10 V145 nC @ 10 V170 nC @ 10 V183 nC @ 10 V190 nC @ 10 V215 nC @ 10 V304 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
2180 pF @ 400 V4340 pF @ 400 V4369 pF @ 100 V4975 pF @ 400 V5200 pF @ 100 V5243 pF @ 400 V5270 pF @ 50 V5623 pF @ 400 V6800 pF @ 25 V6800 pF @ 100 V7149 pF @ 400 V7240 pF @ 100 V7268 pF @ 400 V8180 pF @ 100 V
Power Dissipation (Max)
129W (Tc)227W (Tc)245W (Tc)255W (Tc)305W (Tc)320W (Tc)357W (Tc)380W (Tc)415W (Tc)431W (Tc)446W (Tc)450W (Tc)481W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-TO247-3PG-TO247-3-1PG-TO247-3-41PG-TO247-4TO-220ABTO-247TO-247AC
Package / Case
TO-220-3TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRFB4115PBF
MOSFET N-CH 150V 104A TO220AB
Infineon Technologies
10,706
In Stock
1 : ¥28.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
104A (Tc)
10V
11mOhm @ 62A, 10V
5V @ 250µA
120 nC @ 10 V
±20V
5270 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
PG-TO247-3
IPW60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-3
Infineon Technologies
867
In Stock
1 : ¥41.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
129W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PG-TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
Infineon Technologies
1,197
In Stock
1 : ¥125.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
47A (Tc)
10V
70mOhm @ 30A, 10V
3.9V @ 2.7mA
320 nC @ 10 V
±20V
6800 pF @ 25 V
-
415W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
PG-TO247-3
IPW60R045CPFKSA1
MOSFET N-CH 650V 60A TO247-3
Infineon Technologies
1,763
In Stock
1 : ¥146.46000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
60A (Tc)
10V
45mOhm @ 44A, 10V
3.5V @ 3mA
190 nC @ 10 V
±20V
6800 pF @ 100 V
-
431W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
AUIRFP4310Z BACK
IPW65R019C7FKSA1
MOSFET N-CH 650V 75A TO247-3
Infineon Technologies
137
In Stock
1 : ¥169.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-3 AC EP
IPW65R035CFD7AXKSA1
MOSFET N-CH 650V 63A TO247-3-41
Infineon Technologies
1,201
In Stock
1 : ¥62.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
63A (Tc)
10V
35mOhm @ 35.8A, 10V
4.5V @ 1.79mA
145 nC @ 10 V
±20V
7149 pF @ 400 V
-
305W (Tc)
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3 HiP
STW70N60M2
MOSFET N-CH 600V 68A TO247
STMicroelectronics
812
In Stock
1 : ¥75.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
68A (Tc)
10V
40mOhm @ 34A, 10V
4V @ 250µA
118 nC @ 10 V
±25V
5200 pF @ 100 V
-
450W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
TO-247-3 AC EP
IPW60R024CFD7XKSA1
MOSFET N-CH 650V 77A TO247-3-41
Infineon Technologies
195
In Stock
1 : ¥105.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
77A (Tc)
10V
24mOhm @ 42.4A, 10V
4.5V @ 2.12mA
183 nC @ 10 V
±20V
7268 pF @ 400 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
370
In Stock
1 : ¥71.26000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
50A (Tc)
10V
41mOhm @ 24.8A, 10V
4.5V @ 1.24mA
102 nC @ 10 V
±20V
4975 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
167
In Stock
1 : ¥76.76000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
54A (Tc)
10V
37mOhm @ 32.6A, 10V
4.5V @ 1.63mA
136 nC @ 10 V
±20V
5623 pF @ 400 V
-
245W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-4
IPZA60R037P7XKSA1
MOSFET N-CH 600V 76A TO247-4
Infineon Technologies
210
In Stock
1 : ¥86.04000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
76A (Tc)
10V
37mOhm @ 29.5A, 10V
4V @ 1.48mA
121 nC @ 10 V
±20V
5243 pF @ 400 V
-
255W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4
TO-247-4
AUIRFP4310Z BACK
IPW60R040C7XKSA1
MOSFET N-CH 600V 50A TO247-3
Infineon Technologies
1,577
In Stock
1 : ¥91.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-3 AC EP
SIHG039N60E-GE3
MOSFET N-CH 600V 63A TO247AC
Vishay Siliconix
280
In Stock
1 : ¥95.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
63A (Tc)
10V
39mOhm @ 32A, 10V
5V @ 250µA
126 nC @ 10 V
±30V
4369 pF @ 100 V
-
357W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
IFEINFAIGW50N65F5XKSA1
FCH041N65F-F085
MOSFET N-CH 650V 76A TO247-3
Fairchild Semiconductor
163
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
650 V
76A (Tc)
10V
41mOhm @ 38A, 10V
5V @ 250µA
304 nC @ 10 V
±20V
13566 pF @ 25 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247
TO-247-3
AUIRFP4310Z BACK
IPW65R037C6FKSA1
MOSFET N-CH 650V 83.2A TO247-3
Infineon Technologies
51
In Stock
1 : ¥96.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
83.2A (Tc)
10V
37mOhm @ 33.1A, 10V
3.5V @ 3.3mA
330 nC @ 10 V
±20V
7240 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
AUIRFP4310Z BACK
IPW60R041P6FKSA1
MOSFET N-CH 600V 77.5A TO247-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥97.12000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
77.5A (Tc)
10V
41mOhm @ 35.5A, 10V
4.5V @ 2.96mA
170 nC @ 10 V
±20V
8180 pF @ 100 V
-
481W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
Showing
of 16

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.