Single FETs, MOSFETs

Results: 15
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™ C7CoolMOS™ CFD7CoolSiC™HEXFET®MDmesh™ M2OptiMOS™PowerTrench®QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time Buy
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
25 V30 V100 V500 V600 V650 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta)5.5A (Ta)5.7A (Ta)5.8A (Ta)10.5A (Ta)11A (Ta), 35A (Tc)14A (Tc)16A (Ta)20A (Tc)23.5A (Tc)24A (Tc)31A (Tc)46A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V18V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 50A, 10V6.6mOhm @ 16A, 10V11mOhm @ 20A, 10V12mOhm @ 11.5A, 10V24mOhm @ 5.8A, 10V26mOhm @ 6.2A, 10V30mOhm @ 7.5A, 10V42mOhm @ 5.7A, 10V45mOhm @ 24.9A, 10V70mOhm @ 15.1A, 10V95mOhm @ 11.8A, 10V111mOhm @ 11.2A, 18V165mOhm @ 10A, 10V240mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.35V @ 10µA2.4V @ 50µA2.5V @ 250µA3V @ 250µA3.8V @ 125µA4V @ 1.25mA4V @ 250µA4V @ 590µA4.5V @ 760µA5V @ 250µA5.7V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V19 nC @ 18 V20 nC @ 5 V21 nC @ 4.5 V24 nC @ 10 V26.7 nC @ 10 V34 nC @ 10 V45 nC @ 10 V51 nC @ 10 V64 nC @ 10 V67 nC @ 10 V92 nC @ 10 V93 nC @ 10 V95 nC @ 10 V
Vgs (Max)
±12V+20V, -2V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 10 V624 pF @ 400 V1281 pF @ 15 V1360 pF @ 100 V1460 pF @ 15 V2038 pF @ 25 V2140 pF @ 400 V2147 pF @ 15 V2721 pF @ 400 V2820 pF @ 15 V4340 pF @ 400 V5500 pF @ 25 V7000 pF @ 50 V
Power Dissipation (Max)
900mW (Ta)1W (Ta)1.25W (Ta)1.3W (Ta)1.5W (Ta)1.6W (Ta)2.5W (Ta)104W (Tc)128W (Tc)156W (Tc)169W (Tc)188W (Tc)190W (Tc)227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SO8-SOICPG-TO220-3PG-TO220-3-1PG-TO247-3-1PG-TO247-3-21PG-TO247-3-41POWERDI3333-8PowerDI3333-8 (Type UX)SOT-23SuperSOT™-6TO-247-3TO-247ACTO-3PN
Package / Case
8-PowerVDFN8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6TO-220-3TO-236-3, SC-59, SOT-23-3TO-247-3TO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRFML8244TRPBF
MOSFET N-CH 25V 5.8A SOT23
Infineon Technologies
29,074
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.85127
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
5.8A (Ta)
4.5V, 10V
24mOhm @ 5.8A, 10V
2.35V @ 10µA
5.4 nC @ 10 V
±20V
430 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PowerDI3333-8
DMG7430LFG-7
MOSFET N-CH 30V 10.5A PWRDI3333
Diodes Incorporated
55,662
In Stock
1 : ¥3.28000
Cut Tape (CT)
2,000 : ¥0.89524
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
10.5A (Ta)
4.5V, 10V
11mOhm @ 20A, 10V
2.5V @ 250µA
26.7 nC @ 10 V
±20V
1281 pF @ 15 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
8-SOIC
SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO
Vishay Siliconix
30,508
In Stock
1 : ¥7.96000
Cut Tape (CT)
2,500 : ¥3.27896
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.7A (Ta)
4.5V, 10V
30mOhm @ 7.5A, 10V
3V @ 250µA
20 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
AUIRFP4310Z BACK
IPW60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO247-3
Infineon Technologies
1,569
In Stock
1 : ¥51.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
31A (Tc)
10V
70mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-21
TO-247-3
PG-TO247-3
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3
Infineon Technologies
2,397
In Stock
1 : ¥96.71000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
PowerDI3333-8
DMP3018SFV-7
MOSFET P-CH 30V 11A PWRDI3333
Diodes Incorporated
17,142
In Stock
134,000
Factory
1 : ¥4.43000
Cut Tape (CT)
2,000 : ¥1.48105
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta), 35A (Tc)
4.5V, 10V
12mOhm @ 11.5A, 10V
3V @ 250µA
51 nC @ 10 V
±25V
2147 pF @ 15 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
SG6858TZ
FDC645N
MOSFET N-CH 30V 5.5A SUPERSOT6
onsemi
6,000
In Stock
3,000
Factory
1 : ¥5.75000
Cut Tape (CT)
3,000 : ¥2.19776
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.5A (Ta)
4.5V, 10V
26mOhm @ 6.2A, 10V
2V @ 250µA
21 nC @ 4.5 V
±12V
1460 pF @ 15 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
IRF9317TRPBF
MOSFET P-CH 30V 16A 8SO
Infineon Technologies
15,825
In Stock
1 : ¥7.64000
Cut Tape (CT)
4,000 : ¥2.90672
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
16A (Ta)
4.5V, 10V
6.6mOhm @ 16A, 10V
2.4V @ 50µA
92 nC @ 10 V
±20V
2820 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-247-3 AC EP
IRFP450APBF
MOSFET N-CH 500V 14A TO247-3
Vishay Siliconix
485
In Stock
1 : ¥30.87000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
14A (Tc)
10V
400mOhm @ 8.4A, 10V
4V @ 250µA
64 nC @ 10 V
±30V
2038 pF @ 25 V
-
190W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-220-3
IPP65R095C7XKSA1
MOSFET N-CH 650V 24A TO220-3
Infineon Technologies
312
In Stock
1 : ¥42.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
95mOhm @ 11.8A, 10V
4V @ 590µA
45 nC @ 10 V
±20V
2140 pF @ 400 V
-
128W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
8-SOIC
SI9435BDY-T1-GE3
MOSFET P-CH 30V 4.1A 8SO
Vishay Siliconix
2,371
In Stock
1 : ¥7.39000
Cut Tape (CT)
2,500 : ¥2.77081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
30 V
4.1A (Ta)
10V
42mOhm @ 5.7A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
-
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-247-3 HiP
STW26N60M2
MOSFET N-CH 600V 20A TO247
STMicroelectronics
388
In Stock
1 : ¥24.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
165mOhm @ 10A, 10V
4V @ 250µA
34 nC @ 10 V
±25V
1360 pF @ 100 V
-
169W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-3P-3,TO-247-3
FQA24N60
MOSFET N-CH 600V 23.5A TO3PN
onsemi
109
In Stock
1 : ¥65.35000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23.5A (Tc)
10V
240mOhm @ 11.8A, 10V
5V @ 250µA
145 nC @ 10 V
±30V
5500 pF @ 25 V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
IMW65R039M1HXKSA1
IMW65R083M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
36
In Stock
1 : ¥61.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
111mOhm @ 11.2A, 18V
5.7V @ 3.3mA
19 nC @ 18 V
+20V, -2V
624 pF @ 400 V
-
104W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TO-220-3
IPP039N10N5AKSA1
MOSFET N-CH 100V 100A TO220-3
Infineon Technologies
0
In Stock
50 : ¥22.61640
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
3.9mOhm @ 50A, 10V
3.8V @ 125µA
95 nC @ 10 V
±20V
7000 pF @ 50 V
-
188W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
Showing
of 15

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.