Single FETs, MOSFETs

Results: 19
Manufacturer
Infineon TechnologiesonsemiQorvoVishay Siliconix
Series
-HEXFET®, StrongIRFET™OptiMOS™PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
30 V40 V60 V75 V80 V100 V750 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)11A (Ta), 55A (Tc)14.9A (Ta), 90A (Tc)19A (Ta), 100A (Tc)23A (Ta), 100A (Tc)26A (Ta), 100A (Tc)28A (Tc)30A (Ta), 100A (Tc)47A (Tc)74A (Tc)100A (Tc)195A (Tc)217A (Tc)362A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V12V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 132A, 10V1.6mOhm @ 100A, 10V1.6mOhm @ 50A, 10V2mOhm @ 100A, 10V2mOhm @ 15A, 10V2.3mOhm @ 30A, 10V3mOhm @ 30A, 10V3mOhm @ 50A, 10V3.5mOhm @ 50A, 10V3.7mOhm @ 50A, 10V3.9mOhm @ 50A, 10V4mOhm @ 50A, 10V6mOhm @ 50A, 10V7.2mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA2.3V @ 14µA2.5V @ 250µA2.8V @ 36µA2.8V @ 95µA3V @ 250µA3.5V @ 250µA3.5V @ 33µA3.5V @ 90µA3.8V @ 115µA3.8V @ 36µA3.8V @ 95µA3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 4.5 V21 nC @ 10 V25 nC @ 10 V26 nC @ 10 V27 nC @ 10 V29 nC @ 10 V37.8 nC @ 15 V55 nC @ 10 V68 nC @ 10 V71 nC @ 10 V72 nC @ 10 V76 nC @ 10 V87 nC @ 10 V100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 15 V1300 pF @ 30 V1400 pF @ 400 V1600 pF @ 15 V1870 pF @ 40 V2000 pF @ 30 V2100 pF @ 40 V4300 pF @ 15 V4600 pF @ 50 V4900 pF @ 50 V5200 pF @ 30 V5300 pF @ 50 V5600 pF @ 40 V5915 pF @ 37.5 V
Power Dissipation (Max)
830mW (Ta), 104.2W (Tc)1.25W (Ta), 2.5W (Tc)2.5W (Ta), 139W (Tc)2.5W (Ta), 156W (Tc)2.5W (Ta), 43W (Tc)2.5W (Ta), 66W (Tc)2.5W (Ta), 69W (Tc)5.2W (Ta), 83W (Tc)36W (Tc)96W (Tc)125W (Tc)230W (Tc)242W (Tc)294W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-PQFN (5x6)DirectFET™ Isometric MEPG-TDSON-8 FLPG-TDSON-8-1PG-TDSON-8-6PG-TDSON-8-7PowerPAK® SO-8SOT-23-3 (TO-236)TO-220ABTO-247-4
Package / Case
8-PowerTDFNDirectFET™ Isometric MEPowerPAK® SO-8TO-220-3TO-236-3, SC-59, SOT-23-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
19Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2343CDS-T1-GE3
MOSFET P-CH 30V 5.9A SOT23-3
Vishay Siliconix
17,637
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65107
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.9A (Tc)
4.5V, 10V
45mOhm @ 4.2A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
590 pF @ 15 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PG-TDSON-8-1
BSC123N08NS3GATMA1
MOSFET N-CH 80V 11A/55A TDSON
Infineon Technologies
65,421
In Stock
1 : ¥12.40000
Cut Tape (CT)
5,000 : ¥4.87753
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
11A (Ta), 55A (Tc)
6V, 10V
12.3mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1870 pF @ 40 V
-
2.5W (Ta), 66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-Power TDFN
BSC039N06NSATMA1
MOSFET N-CH 60V 19A/100A TDSON
Infineon Technologies
15,159
In Stock
1 : ¥14.12000
Cut Tape (CT)
5,000 : ¥6.14295
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
19A (Ta), 100A (Tc)
6V, 10V
3.9mOhm @ 50A, 10V
2.8V @ 36µA
27 nC @ 10 V
±20V
2000 pF @ 30 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
26,051
In Stock
1 : ¥14.45000
Cut Tape (CT)
5,000 : ¥6.26607
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
74A (Tc)
6V, 10V
7.2mOhm @ 37A, 10V
3.8V @ 36µA
29 nC @ 10 V
±20V
2100 pF @ 40 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
8-Power TDFN
BSC094N06LS5ATMA1
MOSFET N-CHANNEL 60V 47A 8TDSON
Infineon Technologies
2,350
In Stock
1 : ¥14.78000
Cut Tape (CT)
5,000 : ¥3.80199
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
47A (Tc)
4.5V, 10V
9.4mOhm @ 24A, 10V
2.3V @ 14µA
9.4 nC @ 4.5 V
±20V
1300 pF @ 30 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-Power TDFN
BSC030N08NS5ATMA1
MOSFET N-CH 80V 100A TDSON
Infineon Technologies
18,670
In Stock
1 : ¥18.39000
Cut Tape (CT)
5,000 : ¥7.97480
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3mOhm @ 50A, 10V
3.8V @ 95µA
76 nC @ 10 V
±20V
5600 pF @ 40 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
PG-TDSON-8-1
BSC060N10NS3GATMA1
MOSFET N-CH 100V 14.9/90A 8TDSON
Infineon Technologies
17,142
In Stock
1 : ¥20.28000
Cut Tape (CT)
5,000 : ¥8.81537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14.9A (Ta), 90A (Tc)
6V, 10V
6mOhm @ 50A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4900 pF @ 50 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
8-PowerTDFN
BSC016N06NSATMA1
MOSFET N-CH 60V 30A/100A TDSON
Infineon Technologies
24,122
In Stock
1 : ¥20.77000
Cut Tape (CT)
5,000 : ¥9.02233
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Ta), 100A (Tc)
6V, 10V
1.6mOhm @ 50A, 10V
2.8V @ 95µA
71 nC @ 10 V
±20V
5200 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
PowerPAK SO-8
SI7489DP-T1-E3
MOSFET P-CH 100V 28A PPAK SO-8
Vishay Siliconix
47,422
In Stock
1 : ¥21.02000
Cut Tape (CT)
3,000 : ¥9.48393
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
41mOhm @ 7.8A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4600 pF @ 50 V
-
5.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
BSC040N10NS5ATMA1
MOSFET N-CH 100V 100A TDSON
Infineon Technologies
51,578
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.54132
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 95µA
72 nC @ 10 V
±20V
5300 pF @ 50 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
8-Power TDFN
BSC035N10NS5ATMA1
MOSFET N-CH 100V 100A TDSON
Infineon Technologies
13,399
In Stock
1 : ¥22.49000
Cut Tape (CT)
5,000 : ¥10.49586
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
3.5mOhm @ 50A, 10V
3.8V @ 115µA
87 nC @ 10 V
±20V
6500 pF @ 50 V
-
2.5W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
TO-247-4L
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
Qorvo
524
In Stock
1 : ¥88.25000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
41mOhm @ 30A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
PG-TDSON-8-1
BSC030N03LSGATMA1
MOSFET N-CH 30V 23A/100A TDSON
Infineon Technologies
7,431
In Stock
1 : ¥7.80000
Cut Tape (CT)
5,000 : ¥3.06558
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
23A (Ta), 100A (Tc)
4.5V, 10V
3mOhm @ 30A, 10V
2.2V @ 250µA
55 nC @ 10 V
±20V
4300 pF @ 15 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-220AB PKG
IRFB7437PBF
MOSFET N-CH 40V 195A TO220AB
Infineon Technologies
2,157
In Stock
1 : ¥8.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
2mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7434PBF
MOSFET N-CH 40V 195A TO220AB
Infineon Technologies
531
In Stock
1 : ¥14.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.6mOhm @ 100A, 10V
3.9V @ 250µA
324 nC @ 10 V
±20V
10820 pF @ 25 V
-
294W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
PowerPAK SO-8L
SQJ160EP-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vishay Siliconix
418
In Stock
1 : ¥15.19000
Cut Tape (CT)
3,000 : ¥6.86041
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
362A (Tc)
10V
2mOhm @ 15A, 10V
3.5V @ 250µA
119 nC @ 10 V
±20V
6697 pF @ 25 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DirectFET Isometric ME
IRF7480MTRPBF
MOSFET N-CH 40V 217A DIRECTFET
Infineon Technologies
17,204
In Stock
1 : ¥20.44000
Cut Tape (CT)
4,800 : ¥8.86100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
217A (Tc)
6V, 10V
1.2mOhm @ 132A, 10V
3.9V @ 150µA
185 nC @ 10 V
±20V
6680 pF @ 25 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric ME
DirectFET™ Isometric ME
8-Power TDFN
BSC0502NSIATMA1
MOSFET N-CH 30V 26A/100A TDSON
Infineon Technologies
24,257
In Stock
1 : ¥10.67000
Cut Tape (CT)
5,000 : ¥4.20384
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
26A (Ta), 100A (Tc)
4.5V, 10V
2.3mOhm @ 30A, 10V
2V @ 250µA
26 nC @ 10 V
±20V
1600 pF @ 15 V
-
2.5W (Ta), 43W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
8-PQFN
FDMS037N08B
MOSFET N-CH 75V 100A 8PQFN
onsemi
5,676
In Stock
1 : ¥22.08000
Cut Tape (CT)
3,000 : ¥9.94049
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
100A (Tc)
10V
3.7mOhm @ 50A, 10V
4.5V @ 250µA
100 nC @ 10 V
±20V
5915 pF @ 37.5 V
-
830mW (Ta), 104.2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Showing
of 19

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.