Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPW60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-3-41 Infineon Technologies	1,934 In Stock	1 : ¥55.66000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	45mOhm @ 22.5A, 10V	4V @ 1.08mA	90 nC @ 10 V	±20V	3891 pF @ 400 V	-	201W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IPB65R045C7ATMA2 MOSFET N-CH 650V 46A TO263-3 Infineon Technologies	793 In Stock	1 : ¥93.92000 Cut Tape (CT) 1,000 : ¥51.43718 Tape & Reel (TR)	CoolMOS™ C7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPW47N60C3FKSA1 MOSFET N-CH 650V 47A TO247-3 Infineon Technologies	634 In Stock	1 : ¥125.61000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	320 nC @ 10 V	±20V	6800 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPW65R019C7FKSA1 MOSFET N-CH 650V 75A TO247-3 Infineon Technologies	615 In Stock	1 : ¥169.53000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	19mOhm @ 58.3A, 10V	4V @ 2.92mA	215 nC @ 10 V	±20V	9900 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
SI4190ADY-T1-GE3 MOSFET N-CH 100V 18.4A 8SO Vishay Siliconix	1,107 In Stock	1 : ¥14.70000 Cut Tape (CT) 2,500 : ¥6.61010 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	18.4A (Tc)	4.5V, 10V	8.8mOhm @ 15A, 10V	2.8V @ 250µA	67 nC @ 10 V	±20V	1970 pF @ 50 V	-	3W (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPB65R065C7ATMA2 MOSFET N-CH 650V 33A TO263-3 Infineon Technologies	4,846 In Stock	1 : ¥39.00000 Cut Tape (CT) 1,000 : ¥28.84411 Tape & Reel (TR)	CoolMOS™ C7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	65mOhm @ 17.1A, 10V	4.5V @ 200µA	64 nC @ 10 V	±20V	3020 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FCP067N65S3 MOSFET N-CH 650V 44A TO220 onsemi	760 In Stock	1 : ¥50.90000 Tube	SuperFET® III	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	44A (Tc)	10V	67mOhm @ 22A, 10V	4.5V @ 4.4mA	78 nC @ 10 V	±30V	3090 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTH11P50 MOSFET P-CH 500V 11A TO247 Littelfuse Inc.	102 In Stock	1 : ¥88.91000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	750mOhm @ 5.5A, 10V	5V @ 250µA	130 nC @ 10 V	±20V	4700 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IPW60R040C7XKSA1 MOSFET N-CH 600V 50A TO247-3 Infineon Technologies	1,577 In Stock	1 : ¥91.37000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	40mOhm @ 24.9A, 10V	4V @ 1.24mA	107 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPP60R080P7XKSA1 MOSFET N-CH 650V 37A TO220-3 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥35.30000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	37A (Tc)	10V	80mOhm @ 11.8A, 10V	4V @ 590µA	51 nC @ 10 V	±20V	2180 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.