Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPB60R055CFD7ATMA1 MOSFET N-CH 600V 38A TO263-3 Infineon Technologies	3,898 In Stock	1 : ¥50.00000 Cut Tape (CT) 1,000 : ¥28.37809 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	55mOhm @ 18A, 10V	4.5V @ 900µA	79 nC @ 10 V	±20V	3194 pF @ 400 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPAN60R125PFD7SXKSA1 MOSFET N-CH 650V 25A TO220 Infineon Technologies	3,277 In Stock	1 : ¥21.35000 Tube	CoolMOS™PFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	25A (Tc)	10V	125mOhm @ 7.8A, 10V	4.5V @ 390µA	36 nC @ 10 V	±20V	1503 pF @ 400 V	-	32W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SIHB053N60E-GE3 E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix	1,010 In Stock	1 : ¥49.92000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	54mOhm @ 26.5A, 10V	5V @ 250µA	92 nC @ 10 V	±30V	3722 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB65R050CFD7AATMA1 AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies	830 In Stock	1 : ¥63.38000 Cut Tape (CT) 1,000 : ¥35.92849 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	50mOhm @ 24.8A, 10V	4.5V @ 1.24mA	102 nC @ 10 V	±30V	4975 pF @ 400 V	-	227W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CGD65B200S2-T13 650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices	4,228 In Stock	1 : ¥37.35000 Cut Tape (CT) 5,000 : ¥17.44583 Tape & Reel (TR)	ICeGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	-	GaNFET (Gallium Nitride)	650 V	8.5A (Tc)	9V, 20V	280mOhm @ 600mA, 12V	4.2V @ 2.75mA	1.4 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.