Single FETs, MOSFETs

Results: 28
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesMicrochip TechnologyonsemiQorvoRohm SemiconductorSTMicroelectronicsWolfspeed, Inc.
Series
-C2M™C3M™CoolSiC™CoolSIC™ M1G3R™Z-FET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)18A (Tc)22A (Tc)26A (Tc)36A (Tc)47A (Tc)52A (Tc)53A (Tc)55A (Tc)56A (Tc)60A (Tc)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V15V15V, 18V18V20V
Rds On (Max) @ Id, Vgs
9.9mOhm @ 108A, 18V18.4mOhm @ 54.3A, 18V23.4mOhm @ 42A, 18V26.9mOhm @ 41A, 18V28mOhm @ 60A, 20V28.5mOhm @ 45A, 18V28.8mOhm @ 50A, 15V29mOhm @ 40A, 12V31mOhm @ 40A, 20V34mOhm @ 38.3A, 18V36mOhm @ 50A, 15V40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
2.69V @ 10mA2.69V @ 12mA2.8V @ 1.25mA (Typ)2.8V @ 10mA2.8V @ 3mA3.6V @ 1.86mA3.6V @ 17.7mA4V @ 5mA4.3V @ 10mA4.3V @ 15.5mA4.3V @ 20mA4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs
13.4 nC @ 18 V20.4 nC @ 20 V23 nC @ 18 V28 nC @ 15 V37.8 nC @ 15 V46 nC @ 18 V51 nC @ 18 V52 nC @ 15 V62 nC @ 5 V62 nC @ 18 V63 nC @ 18 V68 nC @ 18 V
Vgs (Max)
+15V, -4V±15V+18V, -15V+19V, -8V+20V, -10V+20V, -5V+20V, -7V±20V+21V, -4V+22V, -10V+22V, -4V+22V, -8V+23V, -10V+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
259 pF @ 1000 V491 pF @ 800 V640 pF @ 400 V763 pF @ 800 V950 pF @ 1000 V1337 pF @ 800 V1430 pF @ 800 V1527 pF @ 800 V1620 pF @ 800 V1781 pF @ 800 V1893 pF @ 1000 V1900 pF @ 800 V
FET Feature
-Current Sensing
Power Dissipation (Max)
62.5W (Tc)98W (Tc)107W (Tc)136W (Tc)189W (Tc)192W (Tc)227W (Tc)228W (Tc)262W (Tc)273W (Tc)312W330W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 175°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3PG-TO247-3-41PG-TO247-4-1PG-TO247-4-8PG-TO247-4-U02PG-TO263-7-12TO-247-3TO-247-4TO-247-4LTO-247N
Package / Case
TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
C2D10120D
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
Wolfspeed, Inc.
14,348
In Stock
1 : ¥89.98000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
10A (Tc)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4 nC @ 20 V
+25V, -10V
259 pF @ 1000 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
240
In Stock
1 : ¥118.63000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
62 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
GeneSiC Semiconductor
955
In Stock
1 : ¥143.01000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,479
In Stock
1 : ¥184.96000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
323
In Stock
1 : ¥194.07000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
26.9mOhm @ 41A, 18V
5.2V @ 17.6mA
109 nC @ 18 V
+20V, -5V
3460 pF @ 800 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
TO-247N
SCT3040KLGC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
974
In Stock
1 : ¥220.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
C2D10120D
C2M0080120D
SICFET N-CH 1200V 36A TO247-3
Wolfspeed, Inc.
1,550
In Stock
1 : ¥240.05000
Bulk
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
98mOhm @ 20A, 20V
4V @ 5mA
62 nC @ 5 V
+25V, -10V
950 pF @ 1000 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4L
UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CA
Qorvo
1,487
In Stock
1 : ¥255.07000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
53A (Tc)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1430 pF @ 800 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
140
In Stock
1 : ¥271.90000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 800 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
853
In Stock
1 : ¥275.10000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
C2D10120D
C3M0021120D
SICFET N-CH 1200V 100A TO247-3
Wolfspeed, Inc.
1,120
In Stock
1 : ¥336.75000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
160 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
677
In Stock
1 : ¥411.71000
Cut Tape (CT)
1,000 : ¥285.19691
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
187A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C2M0040120D
SICFET N-CH 1200V 60A TO247-3
Wolfspeed, Inc.
1,093
In Stock
1 : ¥420.16000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
52mOhm @ 40A, 20V
2.8V @ 10mA
115 nC @ 20 V
+25V, -10V
1893 pF @ 1000 V
-
330W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
114
In Stock
1 : ¥496.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
CoolSiC_MOSFET
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Infineon Technologies
2,597
In Stock
1 : ¥70.85000
Cut Tape (CT)
1,000 : ¥40.17931
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
-
125mOhm @ 8.5A, 18V
5.7V @ 3.7mA
23 nC @ 18 V
+18V, -15V
763 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
577
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
352
In Stock
1 : ¥112.39000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 10mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247N
SCT4018KEC11
1200V, 81A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
363
In Stock
1 : ¥120.43000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
81A (Tj)
18V
23.4mOhm @ 42A, 18V
4.8V @ 22.2mA
170 nC @ 18 V
+21V, -4V
4532 pF @ 800 V
-
312W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
CoolSiC_MOSFET
IMBG120R045M1HXTMA1
SICFET N-CH 1.2KV 47A TO263
Infineon Technologies
1,007
In Stock
1 : ¥124.62000
Cut Tape (CT)
1,000 : ¥78.94947
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
47A (Tc)
-
63mOhm @ 16A, 18V
5.7V @ 7.5mA
46 nC @ 18 V
+18V, -15V
1527 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
159
In Stock
1 : ¥128.56000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-3
NVHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
711
In Stock
900
Factory
1 : ¥140.22000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
IMW120R030M1HXKSA1
SICFET N-CH 1.2KV 56A TO247-3
Infineon Technologies
1,591
In Stock
1 : ¥141.86000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
40mOhm @ 25A, 18V
5.7V @ 10mA
63 nC @ 18 V
+23V, -7V
2120 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
SILICON CARBIDE POWER MOSFET 120
SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120
STMicroelectronics
598
In Stock
1 : ¥190.46000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
52mOhm @ 30A, 18V
5V @ 1mA
94 nC @ 18 V
+22V, -10V
1969 pF @ 800 V
-
388W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
NTHL025N065SC1
SIC MOS TO247-3L 650V
onsemi
167
In Stock
1 : ¥162.71000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
99A (Tc)
15V, 18V
28.5mOhm @ 45A, 18V
4.3V @ 15.5mA
164 nC @ 18 V
+22V, -8V
3480 pF @ 325 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
NVHL020N120SC1
SICFET N-CH 1200V 103A TO247-3
onsemi
238
In Stock
450
Factory
1 : ¥289.88000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
103A (Tc)
20V
28mOhm @ 60A, 20V
4.3V @ 20mA
203 nC @ 20 V
+25V, -15V
2890 pF @ 800 V
-
535W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
Showing
of 28

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.