Single FETs, MOSFETs

Results: 16
Manufacturer
Infineon TechnologiesonsemiWolfspeed, Inc.
Series
-C3M™CoolSIC™ M1EZ-FET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V750 V1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Tc)22A (Tc)26A (Tc)37A (Tc)39A (Tc)42A (Tc)47A (Tc)49A (Tc)55A (Tc)57A (Tc)58A (Tc)77A (Tc)97A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V18V20V
Rds On (Max) @ Id, Vgs
21mOhm @ 55.8A, 15V34mOhm @ 33.5A, 15V50mOhm @ 25A, 18V53mOhm @ 31.9A, 15V56mOhm @ 35A, 20V60mOhm @ 17.6A, 15V70mOhm @ 20A, 18V79mOhm @ 13.2A, 15V94mOhm @ 13.3A, 18V157mOhm @ 6.76A, 15V1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.6V @ 1.86mA3.6V @ 15.5mA3.6V @ 3.64mA3.6V @ 3.6mA3.6V @ 4.84mA3.6V @ 5mA3.6V @ 8.77mA3.6V @ 9.22mA3.8V @ 4.84mA4V @ 500µA4.3V @ 10mA4.3V @ 6.5mA4.3V @ 8mA5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 20 V22 nC @ 18 V28 nC @ 15 V46 nC @ 15 V63 nC @ 15 V65 nC @ 15 V74 nC @ 18 V94 nC @ 15 V105 nC @ 18 V106 nC @ 20 V108 nC @ 15 V111 nC @ 15 V188 nC @ 15 V
Vgs (Max)
-8V, +19V+15V, -4V+19V, -8V+22V, -8V+23V, -5V+25V, -10V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
191 pF @ 1000 V640 pF @ 400 V744 pF @ 400 V1020 pF @ 600 V1170 pF @ 400 V1170 pF @ 600 V1473 pF @ 325 V1606 pF @ 500 V1621 pF @ 600 V1762 pF @ 800 V1870 pF @ 325 V2726 pF @ 1000 V2970 pF @ 400 V2980 pF @ 600 V
Power Dissipation (Max)
69W (Tc)96W (Tc)98W (Tc)131W (Tc)139W (Tc)150W (Tc)176W (Tc)187W (Tc)242W319W (Tc)326W (Tc)416W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3-41TO-247-3TO-247-4LTOLL
Package / Case
8-PowerSFNTO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
16Results
Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
C2D10120D
C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
Wolfspeed, Inc.
2,575
In Stock
1 : ¥93.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
4.9A (Tc)
20V
1.1Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
191 pF @ 1000 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0045065L
C3M0060065L-TR
SIC, MOSFET, 60M, 650V, TOLL, IN
Wolfspeed, Inc.
2,381
In Stock
1 : ¥113.54000
Cut Tape (CT)
2,000 : ¥66.90991
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.64mA
46 nC @ 15 V
+19V, -8V
1170 pF @ 400 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
C2D10120D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
708
In Stock
1 : ¥293.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
580
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
697
In Stock
1 : ¥95.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
150W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0045065D
GEN 3 650V 45 M SIC MOSFET
Wolfspeed, Inc.
459
In Stock
1 : ¥161.57000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
63 nC @ 15 V
+19V, -8V
1621 pF @ 600 V
-
176W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
E3M0040120K
SIC, MOSFET, 40M, 1200V, TO-247-
Wolfspeed, Inc.
278
In Stock
1 : ¥191.37000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
57A (Tc)
15V
53mOhm @ 31.9A, 15V
3.6V @ 8.77mA
94 nC @ 15 V
+19V, -8V
2726 pF @ 1000 V
-
242W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C3M0025065L-TR
C3M0025065L-TR
SIC, MOSFET, 25M, 650V, TOLL, T&
Wolfspeed, Inc.
1,845
In Stock
1 : ¥262.80000
Cut Tape (CT)
2,000 : ¥168.50624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
77A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
111 nC @ 15 V
-8V, +19V
2970 pF @ 400 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
TO-247-3 AC EP
IMW65R072M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
265
In Stock
1 : ¥67.24000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
26A (Tc)
18V
94mOhm @ 13.3A, 18V
5.7V @ 4mA
22 nC @ 18 V
+23V, -5V
744 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-4
NTH4L045N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
238
In Stock
89,100
Factory
1 : ¥98.68000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
55A (Tc)
15V, 18V
50mOhm @ 25A, 18V
4.3V @ 8mA
105 nC @ 18 V
+22V, -8V
1870 pF @ 325 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NVH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
onsemi
346
In Stock
900
Factory
1 : ¥145.64000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
58A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1762 pF @ 800 V
-
319W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
1,548
In Stock
1 : ¥255.16000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
108 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4
NTH4L060N065SC1
SIC MOS TO247-4L 650V
onsemi
570
In Stock
11,250
Factory
1 : ¥64.78000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
15V, 18V
70mOhm @ 20A, 18V
4.3V @ 6.5mA
74 nC @ 18 V
+22V, -8V
1473 pF @ 325 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
E3M0060065D
60M 650V SIC AUTOMOTIVE MOSFET
Wolfspeed, Inc.
343
In Stock
1 : ¥84.23000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.6mA
46 nC @ 15 V
+19V, -8V
1170 pF @ 600 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
C3M0025075K1
C3M0045075K1
SICFET N-CH 750V 42A TO247
Wolfspeed, Inc.
237
In Stock
1 : ¥96.30000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
42A (Tc)
15V
60mOhm @ 17.6A, 15V
3.8V @ 4.84mA
65 nC @ 15 V
-8V, +19V
1606 pF @ 500 V
-
139W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
Showing
of 16

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.