FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

BUK9K52-60RAX MOSFET 2N-CH 60V 16A LFPAK56D Nexperia USA Inc.	2,338 In Stock	1 : ¥9.03000 Cut Tape (CT) 1,500 : ¥3.96183 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	16A (Ta)	49mOhm @ 5A, 10V	2.1V @ 1mA	5.6nC @ 5V	725pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
BUK9K25-40RAX MOSFET 2N-CH 40V 18.2A LFPAK56D Nexperia USA Inc.	7,495 In Stock	1 : ¥9.03000 Cut Tape (CT) 1,500 : ¥3.96183 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	40V	18.2A (Ta)	24mOhm @ 5A, 10V	2.1V @ 1mA	6.3nC @ 5V	701pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
BUK9K35-60RAX MOSFET 2N-CH 60V 22A LFPAK56D Nexperia USA Inc.	2,531 In Stock	1 : ¥9.85000 Cut Tape (CT) 1,500 : ¥4.32952 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	22A (Ta)	32mOhm @ 5A, 10V	2.1V @ 1mA	7.8nC @ 5V	1081pF @ 25V	38W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.