TO-247-2 Single Diodes

Results: 605
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDBourns Inc.Diodes IncorporatedDiotec SemiconductorFairchild SemiconductorGeneSiC SemiconductorHarris CorporationInfineon TechnologiesInventchipIXYSKYOCERA AVXLittelfuse Inc.
Series
-Amp+™CoolSiC™+DUREECOPACK®2EEPP™FFHFREDFRED Pt®FRED Pt® Gen 5HEXFRED®HiPerFRED²™HiPerFRED™
Packaging
BoxBulkCut Tape (CT)Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
Technology
-AvalancheSchottkySiC (Silicon Carbide) SchottkyStandard
Voltage - DC Reverse (Vr) (Max)
40 V45 V200 V250 V300 V400 V500 V600 V650 V700 V800 V1000 V1200 V1400 V
Current - Average Rectified (Io)
5A6A8A10A11.5A12A14.4A15A16A17A18A20A
Voltage - Forward (Vf) (Max) @ If
550 mV @ 15 A600 mV @ 60 A850 mV @ 30 A900 mV @ 60 A950 mV @ 100 A1 V @ 20 A1 V @ 30 A1.08 V @ 60 A1.09 V @ 60 A1.1 V @ 40 A1.1 V @ 45 A1.1 V @ 60 A
Speed
-Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 5A (Io)No Recovery Time > 500mA (Io)Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
0 ns22 ns24 ns25 ns26 ns28 ns30 ns31 ns32 ns33 ns34 ns35 ns
Current - Reverse Leakage @ Vr
1 µA @ 300 V1 µA @ 400 V2 µA @ 1200 V5 µA @ 300 V5 µA @ 400 V5 µA @ 600 V5 µA @ 650 V5 µA @ 1200 V5 µA @ 1600 V6 µA @ 1700 V9 µA @ 1700 V10 µA @ 200 V
Capacitance @ Vr, F
10pF @ 400V, 1MHz12pF @ 600V, 1MHz18pF @ 400V, 1MHz19pF @ 400V, 1MHz30pF @ 600V, 1MHz32pF @ 1200V, 1MHz32pF @ 200V, 1MHz33pF @ 400V, 1MHz38pF @ 800V, 1MHz43pF @ 400V, 1MHz56pF @ 800V, 1MHz73pF @ 800V, 1MHz
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
DO-247 LLPG-TO247-2PG-TO247-2-2TO-247TO-247 [B]TO-247 Long LeadsTO-247-2TO-247-2 (Type HE)TO-247-2LTO-247ACTO-247AC ModifiedTO-247ADTO-247AD-2TO-247GE
Operating Temperature - Junction
-65°C ~ 150°C-65°C ~ 175°C-55°C ~ 150°C-55°C ~ 175°C-50°C ~ 175°C-40°C ~ 150°C-40°C ~ 175°C150°C175°C175°C (Max)-
Stocking Options
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
TO-247-2
APT30D60BG
DIODE GP 600V 30A TO247
Microchip Technology
6,083
In Stock
1 : ¥18.80000
Tube
-
Tube
Active
Standard
600 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT75DQ60BG
DIODE GP 600V 75A TO247
Microchip Technology
23,491
In Stock
1 : ¥22.58000
Tube
-
Tube
Active
Standard
600 V
75A
2.5 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
31 ns
25 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
WND45P16WQ
DIODE GEN PURP 1.6KV 45A TO247-2
WeEn Semiconductors
1,055
In Stock
1 : ¥24.14000
Tube
-
Tube
Active
Standard
1600 V
45A
1.4 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
-
-
-
Through Hole
TO-247-2
TO-247-2
150°C
APT75DQ120BG
APT75DQ120BG
DIODE GP 1.2KV 75A TO247
Microchip Technology
5,497
In Stock
1 : ¥27.01000
Tube
-
Tube
Active
Standard
1200 V
75A
3.1 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
325 ns
100 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT60D60BG
DIODE GP 600V 60A TO247
Microchip Technology
2,797
In Stock
1 : ¥27.01000
Tube
-
Tube
Active
Standard
600 V
60A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
130 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT60D120BG
DIODE GP 1.2KV 60A TO247
Microchip Technology
1,014
In Stock
1 : ¥31.36000
Tube
-
Tube
Active
Standard
1200 V
60A
2.5 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
400 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT60S20BG
APT60S20BG
DIODE SCHOTTKY 200V 75A TO247
Microchip Technology
2,040
In Stock
1 : ¥31.77000
Tube
-
Tube
Active
Schottky
200 V
75A
900 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
1 mA @ 200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
TO-247-2-Series
DSI45-16A
DIODE GEN PURP 1.6KV 45A TO247AD
IXYS
1,080
In Stock
1 : ¥40.39000
Tube
-
Tube
Active
Standard
1600 V
45A
1.28 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
20 µA @ 1600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 175°C
2,637
In Stock
1 : ¥40.88000
Tube
-
Tube
Active
Standard
1200 V
65A
1.12 V @ 65 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
2,260
In Stock
1 : ¥43.92000
Tube
-
Tube
Active
Standard
1200 V
90A
1.2 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
DMA80I1600HA
DIODE GEN PURP 1.6KV 80A TO247
IXYS
1,104
In Stock
1 : ¥44.00000
Tube
-
Tube
Active
Standard
1600 V
80A
1.17 V @ 80 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1600 V
43pF @ 400V, 1MHz
-
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
TO-247-2-Series
DSEP30-12A
DIODE GEN PURP 1.2KV 30A TO247AD
IXYS
6,954
In Stock
1 : ¥46.88000
Tube
Tube
Active
Standard
1200 V
30A
2.74 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
TO-247-2
APT100S20BG
DIODE SCHOTTKY 200V 120A TO247
Microchip Technology
4,400
In Stock
1 : ¥46.96000
Tube
-
Tube
Active
Schottky
200 V
120A
950 mV @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
2 mA @ 200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
1,003
In Stock
1 : ¥48.85000
Tube
Tube
Active
Standard
300 V
30A
1.25 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
38 ns
60 µA @ 300 V
-
-
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
TO-247AC
S4D15120H
DIODE SIL CARB 1.2KV 15A TO247AC
SMC Diode Solutions
431
In Stock
1 : ¥59.52000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
15A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
35 µA @ 1200 V
1200pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247AC
-55°C ~ 175°C
TO-247-2-Series
DSEI60-06A
DIODE GEN PURP 600V 60A TO247AD
IXYS
1,845
In Stock
1 : ¥62.31000
Tube
-
Tube
Active
Standard
600 V
60A
1.8 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
200 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
GD10MPS17H
GD10MPS17H
DIODE SIL CARB 1.7KV 26A TO247-2
GeneSiC Semiconductor
1,857
In Stock
1 : ¥67.07000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
26A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
721pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247AC
S4D30120H
DIODE SIL CARB 1.2KV 94A TO247AC
SMC Diode Solutions
388
In Stock
1 : ¥83.33000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
94A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1200 V
2581pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247AC
-55°C ~ 175°C
TO-247-2-Series
DSEI120-06A
DIODE GEN PURP 600V 77A TO247AD
IXYS
456
In Stock
1 : ¥89.08000
Tube
Tube
Active
Standard
600 V
77A
1.3 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
3 mA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
PG-TO247-2
IDWD30G120C5XKSA1
DIODE SIL CARB 1.2KV 87A TO247-2
Infineon Technologies
732
In Stock
1 : ¥109.11000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
87A
1.65 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
248 µA @ 1200 V
1980pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
UJ3D1725K2
UJ3D1725K2
DIODE SIL CARB 1.7KV 25A TO247-2
Qorvo
4,616
In Stock
1 : ¥122.24000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.7 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
360 µA @ 1700 V
1500pF @ 1V, 1MHz
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD50MPS12H
GD50MPS12H
DIODE SIL CARB 1.2KV 92A TO247-2
GeneSiC Semiconductor
200
In Stock
1 : ¥129.47000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
92A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 1200 V
1835pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
NDSH25170A
NDSH25170A
DIODE SIL CARB 1.7KV 25A TO247-2
onsemi
1,156
In Stock
1 : ¥133.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.75 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 1700 V
2025pF @ 1V, 100kHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
IDWD40G120C5XKSA1
IDWD40G120C5XKSA1
DIODE SIL CARB 1.2KV 110A TO247
Infineon Technologies
451
In Stock
1 : ¥139.16000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
110A
1.65 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
332 µA @ 1200 V
2592pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
C3D10170H
C6D10170H
10A 1700V SIC, SCHOTTKY DIODE
Wolfspeed, Inc.
393
In Stock
1 : ¥142.93000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
40A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1700 V
1227pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
Showing
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TO-247-2 Single Diodes

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.