SCTWA90N65G2V

DigiKey Part Number
497-SCTWA90N65G2V-ND
Manufacturer
Manufacturer Product Number
SCTWA90N65G2V
Description
SILICON CARBIDE POWER MOSFET 650
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Datasheet
 Datasheet
EDA/CAD Models
SCTWA90N65G2V Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
565W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 Long Leads
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥296.05000¥296.05
30¥245.44033¥7,363.21
120¥230.10033¥27,612.04
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.