Single FETs, MOSFETs

Results: 18
Manufacturer
Infineon TechnologiesMicrochip TechnologyonsemiRohm SemiconductorSTMicroelectronicsToshiba Semiconductor and StorageWolfspeed, Inc.
Series
-C3M™CoolSIC™ M1
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V700 V1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)37A (Tc)45A (Tc)47A (Tc)60A (Tc)90A (Tc)91A (Tc)93A (Tc)100A (Tc)106A (Tc)120A (Tc)140A (Tc)163A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V18V18V, 20V20V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V19mOhm @ 40A, 20V21mOhm @ 50A, 18V21mOhm @ 55.8A, 15V25mOhm @ 50A, 18V26mOhm @ 50A, 18V28.5mOhm @ 45A, 18V28.6mOhm @ 36A, 18V30mOhm @ 50A, 18V34mOhm @ 38.3A, 18V52mOhm @ 30A, 18V67mOhm @ 20A, 20V72mOhm @ 20A, 20V79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id
2.4V @ 4mA3.2V @ 1mA3.6V @ 1.86mA3.6V @ 15.5mA3.6V @ 3.6mA3.6V @ 5mA4.3V @ 15.5mA4.3V @ 25mA4.9V @ 1mA5V @ 11.7mA5V @ 1mA5V @ 250µA5V @ 5mA5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V46 nC @ 15 V62 nC @ 18 V73 nC @ 20 V94 nC @ 18 V128 nC @ 18 V133 nC @ 18 V150 nC @ 18 V157 nC @ 18 V162 nC @ 18 V164 nC @ 18 V188 nC @ 15 V215 nC @ 20 V283 nC @ 18 V
Vgs (Max)
+15V, -4V+19V, -8V+20V, -5V+22V, -10V+22V, -4V+22V, -8V+23V, -10V+23V, -5V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 400 V1020 pF @ 600 V1170 pF @ 600 V1370 pF @ 400 V1969 pF @ 800 V2131 pF @ 400 V2208 pF @ 500 V3300 pF @ 400 V3315 pF @ 520 V3480 pF @ 325 V3540 pF @ 800 V4500 pF @ 700 V4790 pF @ 325 V4850 pF @ 400 V
Power Dissipation (Max)
98W (Tc)131W (Tc)150W (Tc)189W (Tc)208W (Tc)240W (Tc)330W (Tc)339W (Tc)342W (Tc)388W (Tc)390W (Tc)395W (Tc)416W (Tc)420W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 175°C (TJ)175°C175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAK-7H2PAK-7HiP247™PG-TO247-3-41TO-247TO-247 Long LeadsTO-247-3TO-247-4TO-247N
Package / Case
TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
18Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
240
In Stock
1 : ¥118.63000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
62 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-3
NTHL015N065SC1
SILICON CARBIDE (SIC) MOSFET - 1
onsemi
157
In Stock
1 : ¥224.54000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
163A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4790 pF @ 325 V
-
643W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
708
In Stock
1 : ¥293.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3022ALGC11
SICFET N-CH 650V 93A TO247N
Rohm Semiconductor
1,492
In Stock
1 : ¥418.54000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
28.6mOhm @ 36A, 18V
5.6V @ 18.2mA
133 nC @ 18 V
+22V, -4V
2208 pF @ 500 V
-
339W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
425
In Stock
1 : ¥90.72000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
22A (Tc)
15V
157mOhm @ 6.76A, 15V
3.6V @ 1.86mA
28 nC @ 15 V
+19V, -8V
640 pF @ 400 V
-
98W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
697
In Stock
1 : ¥95.56000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
150W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D2PAK-7
NTBG025N065SC1
SILICON CARBIDE (SIC) MOSFET - 1
onsemi
2,227
In Stock
1 : ¥162.96000
Cut Tape (CT)
800 : ¥112.50285
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
106A (Tc)
15V, 18V
28.5mOhm @ 45A, 18V
4.3V @ 15.5mA
164 nC @ 18 V
+22V, -8V
3480 pF @ 325 V
-
395W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SILICON CARBIDE POWER MOSFET 120
SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120
STMicroelectronics
598
In Stock
1 : ¥190.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
52mOhm @ 30A, 18V
5V @ 1mA
94 nC @ 18 V
+22V, -10V
1969 pF @ 800 V
-
388W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3 HiP
SCTWA35N65G2V
TRANS SJT N-CH 650V 45A TO247
STMicroelectronics
588
In Stock
1 : ¥90.55000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
72mOhm @ 20A, 20V
3.2V @ 1mA
73 nC @ 20 V
+20V, -5V
73000 pF @ 400 V
-
208W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 Long Leads
TO-247-3
TW015N65C,S1F
TW015N65C,S1F
G3 650V SIC-MOSFET TO-247 15MOH
Toshiba Semiconductor and Storage
52
In Stock
1 : ¥411.89000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
100A (Tc)
18V
21mOhm @ 50A, 18V
5V @ 11.7mA
128 nC @ 18 V
+25V, -10V
4850 pF @ 400 V
-
342W (Tc)
175°C
-
-
Through Hole
TO-247
TO-247-3
TO-247-3 HiP
SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247
STMicroelectronics
595
In Stock
1 : ¥202.54000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
100A (Tc)
18V
26mOhm @ 50A, 18V
5V @ 5mA
162 nC @ 18 V
+22V, -10V
3315 pF @ 520 V
-
420W (Tc)
-55°C ~ 200°C (TJ)
Automotive
AEC-Q101
Through Hole
HiP247™
TO-247-3
C2D10120D
E3M0060065D
60M 650V SIC AUTOMOTIVE MOSFET
Wolfspeed, Inc.
343
In Stock
1 : ¥84.23000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.6mA
46 nC @ 15 V
+19V, -8V
1170 pF @ 600 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
D2PAK-7
NVBG025N065SC1
SIC MOS D2PAK-7L 650V
onsemi
800
In Stock
1 : ¥218.22000
Cut Tape (CT)
800 : ¥144.74553
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
106A (Tc)
15V, 18V
28.5mOhm @ 45A, 18V
4.3V @ 15.5mA
164 nC @ 18 V
-
3480 pF @ 325 V
-
395W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4
MSC015SMA070B4
TRANS SJT N-CH 700V 140A TO247-4
Microchip Technology
27
In Stock
1 : ¥302.45000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
700 V
140A (Tc)
20V
19mOhm @ 40A, 20V
2.4V @ 4mA
215 nC @ 20 V
+23V, -10V
4500 pF @ 700 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-263-7
SCTH90N65G2V-7
SICFET N-CH 650V 90A H2PAK-7
STMicroelectronics
4
In Stock
1 : ¥276.92000
Cut Tape (CT)
1,000 : ¥180.77825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
90A (Tc)
18V
26mOhm @ 50A, 18V
5V @ 1mA
157 nC @ 18 V
+22V, -10V
3300 pF @ 400 V
-
330W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3 HiP
SCTW35N65G2V
SICFET N-CH 650V 45A HIP247
STMicroelectronics
0
In Stock
Check Lead Time
30 : ¥103.60767
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V, 20V
67mOhm @ 20A, 20V
5V @ 1mA
73 nC @ 20 V
+22V, -10V
1370 pF @ 400 V
-
240W (Tc)
-55°C ~ 200°C (TJ)
Automotive
AEC-Q101
Through Hole
HiP247™
TO-247-3
TO-247-3 HiP
SCTW90N65G2V
SICFET N-CH 650V 90A HIP247
STMicroelectronics
0
In Stock
Check Lead Time
30 : ¥237.58633
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
90A (Tc)
18V
25mOhm @ 50A, 18V
5V @ 250µA
157 nC @ 18 V
+22V, -10V
3300 pF @ 400 V
-
390W (Tc)
-55°C ~ 200°C (TJ)
-
-
Through Hole
HiP247™
TO-247-3
0
In Stock
Check Lead Time
600 : ¥198.47503
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
91A (Tc)
18V
30mOhm @ 50A, 18V
4.9V @ 1mA
150 nC @ 18 V
+22V, -10V
3540 pF @ 800 V
-
547W
-55°C ~ 200°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
Showing
of 18

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.