2N7000,126 NXP USA Inc. | Discrete Semiconductor Products

2N7000,126
DigiKey Part Number	2N7000,126-ND - Tape & Box (TB)
Manufacturer	NXP USA Inc.
Manufacturer Product Number	2N7000,126
Description	MOSFET N-CH 60V 300MA TO92-3
Customer Reference
Detailed Description	N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3
Datasheet	Datasheet

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	NXP USA Inc.
Series	TrenchMOS™
Packaging	Tape & Box (TB)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	830mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number	2N70