IMZ120R350M1HXKSA1

DigiKey Part Number
IMZ120R350M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZ120R350M1HXKSA1
Description
SICFET N-CH 1.2KV 4.7A TO247-4
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
Datasheet
 Datasheet
EDA/CAD Models
IMZ120R350M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
350mOhm @ 2A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥53.28000¥53.28
30¥42.56233¥1,276.87
120¥38.08117¥4,569.74
510¥33.60080¥17,136.41
1,020¥30.24081¥30,845.63
2,010¥28.33673¥56,956.83
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.