IMW120R090M1HXKSA1

DigiKey Part Number
IMW120R090M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW120R090M1HXKSA1
Description
SICFET N-CH 1.2KV 26A TO247-3
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW120R090M1HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥77.01000¥77.01
30¥61.46400¥1,843.92
120¥54.99475¥6,599.37
510¥48.52510¥24,747.80
1,020¥43.67254¥44,545.99
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.