Single FETs, MOSFETs

Results: 12
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon TechnologiesTaiwan Semiconductor Corporation
Series
-HEXFET®SIPMOS®
Packaging
BulkTube
Product Status
ActiveNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta), 14A (Tc)9.4A (Tc)14A (Tc)17A (Tc)18A (Tc)23A (Tc)31A (Tc)74A (Tc)80A (Tc)90A (Tc)160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 90A, 10V3.1mOhm @ 25A, 10V20mOhm @ 38A, 10V23mOhm @ 64A, 10V60mOhm @ 16A, 10V68mOhm @ 5A, 10V68mOhm @ 6A, 10V70mOhm @ 10A, 10V105mOhm @ 10A, 10V117mOhm @ 11A, 10V200mOhm @ 8.4A, 10V210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.2V @ 250µA2.35V @ 100µA2.9V @ 250µA3.9V @ 100µA4V @ 250µA4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V16.4 nC @ 10 V20 nC @ 10 V25 nC @ 10 V34 nC @ 5 V58 nC @ 10 V59 nC @ 4.5 V63 nC @ 10 V97 nC @ 10 V134 nC @ 10 V173 nC @ 10 V180 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V370 pF @ 25 V390 pF @ 50 V760 pF @ 25 V800 pF @ 25 V870 pF @ 30 V1200 pF @ 25 V1300 pF @ 25 V3400 pF @ 25 V4610 pF @ 25 V4880 pF @ 15 V5033 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 30W (Tc)20W (Tc)45W (Tc)48W (Tc)79W (Tc)110W (Tc)135W (Tc)140W (Tc)200W (Tc)340W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
IPAK (TO-251AA)PG-TO220-3-1TO-220ABTO-251 (IPAK)TO-251A
Package / Case
TO-220-3TO-251-3 Short Leads, IPAK, TO-251AATO-251-3 Stub Leads, IPAK
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF9530NPBF
MOSFET P-CH 100V 14A TO220AB
Infineon Technologies
31,570
In Stock
1 : ¥7.64000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
200mOhm @ 8.4A, 10V
4V @ 250µA
58 nC @ 10 V
±20V
760 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF9540NPBF
IRF9540NPBF
MOSFET P-CH 100V 23A TO220AB
Infineon Technologies
2,478
In Stock
1 : ¥11.41000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
23A (Tc)
10V
117mOhm @ 11A, 10V
4V @ 250µA
97 nC @ 10 V
±20V
1300 pF @ 25 V
-
140W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRLU8743PBF
MOSFET N-CH 30V 160A IPAK
Infineon Technologies
1,216
In Stock
1 : ¥13.46000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
160A (Tc)
4.5V, 10V
3.1mOhm @ 25A, 10V
2.35V @ 100µA
59 nC @ 4.5 V
±20V
4880 pF @ 15 V
-
135W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB PKG
IRF4905PBF
MOSFET P-CH 55V 74A TO220AB
Infineon Technologies
40,526
In Stock
1 : ¥17.40000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
74A (Tc)
10V
20mOhm @ 38A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3400 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
SPP80P06PHXKSA1
MOSFET P-CH 60V 80A TO220-3
Infineon Technologies
2,114
In Stock
1 : ¥29.97000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
23mOhm @ 64A, 10V
4V @ 5.5mA
173 nC @ 10 V
±20V
5033 pF @ 25 V
-
340W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
AOI4286
AOI4286
MOSFET N-CH 100V 4A/14A TO251A
Alpha & Omega Semiconductor Inc.
10,635
In Stock
1 : ¥5.01000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4A (Ta), 14A (Tc)
4.5V, 10V
68mOhm @ 5A, 10V
2.9V @ 250µA
10 nC @ 10 V
±20V
390 pF @ 50 V
-
2.5W (Ta), 30W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPAK
IPAK (TO-251)
IRFU120NPBF
MOSFET N-CH 100V 9.4A IPAK
Infineon Technologies
5,054
In Stock
1 : ¥5.25000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
9.4A (Tc)
10V
210mOhm @ 5.6A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
330 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB PKG
IRFZ24NPBF
MOSFET N-CH 55V 17A TO220AB
Infineon Technologies
8,404
In Stock
1 : ¥5.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
10V
70mOhm @ 10A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
370 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
2,197
In Stock
1 : ¥6.40000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
68mOhm @ 6A, 10V
2.2V @ 250µA
16.4 nC @ 10 V
±20V
870 pF @ 30 V
-
20W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
IPAK (TO-251)
IRLU3410PBF
MOSFET N-CH 100V 17A IPAK
Infineon Technologies
4,653
In Stock
1 : ¥8.70000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
4V, 10V
105mOhm @ 10A, 10V
2V @ 250µA
34 nC @ 5 V
±16V
800 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO-220AB PKG
IRF5305PBF
MOSFET P-CH 55V 31A TO220AB
Infineon Technologies
37,848
In Stock
1 : ¥11.33000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
60mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPAK (TO-251)
IRFU7440PBF
MOSFET N-CH 40V 90A IPAK
Infineon Technologies
0
In Stock
35,929
Marketplace
3,000 : ¥5.60565
Tube
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
90A (Tc)
6V, 10V
2.4mOhm @ 90A, 10V
3.9V @ 100µA
134 nC @ 10 V
±20V
4610 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.