Single FETs, MOSFETs

Results: 6
Series
PowerTrench®QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V200 V500 V900 V
Current - Continuous Drain (Id) @ 25°C
670mA (Tc)1A (Tc)1.7A (Tc)2.1A (Tc)3.4A (Ta)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
130mOhm @ 3.4A, 10V280mOhm @ 4.5A, 10V1.05Ohm @ 500mA, 10V2.7Ohm @ 335mA, 10V4.9Ohm @ 1.05A, 10V7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 10 V8 nC @ 10 V8.2 nC @ 10 V15 nC @ 10 V21 nC @ 5 V23 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 15 V250 pF @ 25 V500 pF @ 25 V660 pF @ 25 V1080 pF @ 25 V
Power Dissipation (Max)
2W (Tc)2.5W (Ta), 50W (Tc)2.5W (Ta), 55W (Tc)2.5W (Tc)3W (Ta)
Supplier Device Package
SOT-223-4TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FQD2N90TM
MOSFET N-CH 900V 1.7A DPAK
onsemi
5,256
In Stock
1 : ¥11.41000
Cut Tape (CT)
2,500 : ¥4.70960
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
900 V
1.7A (Tc)
10V
7.2Ohm @ 850mA, 10V
5V @ 250µA
15 nC @ 10 V
±30V
500 pF @ 25 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FQD3P50TM
MOSFET P-CH 500V 2.1A DPAK
onsemi
4,277
In Stock
1 : ¥11.49000
Cut Tape (CT)
2,500 : ¥4.75942
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
500 V
2.1A (Tc)
10V
4.9Ohm @ 1.05A, 10V
5V @ 250µA
23 nC @ 10 V
±30V
660 pF @ 25 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
onsemi
1,295
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.72240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
5V, 10V
280mOhm @ 4.5A, 10V
2V @ 250µA
21 nC @ 5 V
±20V
1080 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223-4
FDT458P
MOSFET P-CH 30V 3.4A SOT223-4
onsemi
53
In Stock
1 : ¥6.32000
Cut Tape (CT)
4,000 : ¥2.40810
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
4.5V, 10V
130mOhm @ 3.4A, 10V
3V @ 250µA
3.5 nC @ 10 V
±20V
205 pF @ 15 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
SOT-223-4
FQT3P20TF
MOSFET P-CH 200V 670MA SOT223-4
onsemi
211
In Stock
1 : ¥6.81000
Cut Tape (CT)
4,000 : ¥2.59479
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
670mA (Tc)
10V
2.7Ohm @ 335mA, 10V
5V @ 250µA
8 nC @ 10 V
±30V
250 pF @ 25 V
-
2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
SOT223-3L
FQT5P10TF
MOSFET P-CH 100V 1A SOT223-4
onsemi
0
In Stock
Check Lead Time
1 : ¥6.16000
Cut Tape (CT)
4,000 : ¥2.33719
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1A (Tc)
10V
1.05Ohm @ 500mA, 10V
4V @ 250µA
8.2 nC @ 10 V
±30V
250 pF @ 25 V
-
2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.